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M. Tanamura,Yukio Watanabe,H. Kida,Naotake Toyama 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
A new approach of the ion milling is proposed, utilizing the mass selectivity of the sputtering process. As model experiments, we performed etching of conducting perovskite oxide lms that are often used as electrode of ferroelectric lms and are known to be extremely structure-sensitive. By using He, N2, Ar and Kr as an etching gas, various etching characteristics are found to depend evidently on the molecular weight of the gas. Substantial improvements are demonstrated by using Kr that has the heaviest molecular weight. To explain the results, a semi-empirical extension of Sigmund theory is proposed. The present approach provides a new way to etch metal oxides including ferroelectrics by utilizing the atomic/molecular mass eect in the sputtering.