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Guiwu Liu,Hongjie Wang,Jianfeng Yang,Tianjian Lu,Guanjun Qiao 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.4
ZrO2 ceramic/stainless steel joints were fabricated by pressureless brazing using a Ag-Cu filler metal and a TiH2 powder precoating. The microstructure and microchemistry of the joint cross section were characterized and analyzed by means of scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The effects of brazing conditions on the joint shear strength were also investigated. The results showed that there existed three zones with distinct microstructural differences crossing the brazing interlayer. A reaction layer and a Ti-rich sublayer were formed at the ZrO2/filler interface. The influence of the brazing temperature on the joint strength was more remarkable than that of the holding time. In the experimental condition ranges, the joint strength first increased, and the maximum shear strength was over 90MPa with the optimized condition. Most of the joint fractures developed in the ceramic matrix near the ceramic/filler interface. ZrO2 ceramic/stainless steel joints were fabricated by pressureless brazing using a Ag-Cu filler metal and a TiH2 powder precoating. The microstructure and microchemistry of the joint cross section were characterized and analyzed by means of scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The effects of brazing conditions on the joint shear strength were also investigated. The results showed that there existed three zones with distinct microstructural differences crossing the brazing interlayer. A reaction layer and a Ti-rich sublayer were formed at the ZrO2/filler interface. The influence of the brazing temperature on the joint strength was more remarkable than that of the holding time. In the experimental condition ranges, the joint strength first increased, and the maximum shear strength was over 90MPa with the optimized condition. Most of the joint fractures developed in the ceramic matrix near the ceramic/filler interface.
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Khalid Shah,Khenata Rabah,Ma Yue,Sun Xiaoliang,Gao Meng,Wu Haicheng,Lu Guiwu,Yang Zhenqing 한국물리학회 2020 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.77 No.1
In the present work, we determined the structural, electronic and optical properties of HgSiX2 (X = P, As) chalcopyrite materials by using the density functional theory (DFT). Our calculated results showed alignment with the data drawn from other experimental and theoretical studies. Therefore including the lattice parameters, bulk moduli, band gaps, the total and partial densities of states and the optical properties. The computed band structures and density of states (DOS) disclosed that HgSiP2 and HgSiAs2 are semiconductors materials with energy gaps equal to 0.931 eV and 0.425 eV, respectively. Our findings displace that the Si-3p, P-3p and As-4p atomic orbitals contribute to the density of states. Moreover, a comprehensive analysis of the electronic and the optical properties such as the reflectivity, absorption spectra, and dielectric functions revealed that the HgSiP2 and the HgSiAs2 materials may be beneficial in optoelectronic applications. We hope that the designs and preparations of the HgSiP2 and the HgSiAs2 materials will lead to give new advance strategies and gateways for the explorations of highly efficient optoelectronic devices.
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