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Kim,Jong Oh,Kim,Min Seok,LeeㅡKwang Il,Kim,Bum Man 대한전자공학회 1995 ICVC : International Conference on VLSI and CAD Vol.4 No.1
An extraction method for device dimensions and lateral channel doping profiles of VDMOST and VIGBT has been developed. Using C-V data between the gate and drain (anode) at a high frequency, the lateral device structure parameters could be extracted. The extracted parameters are in a good agreement faith the expected value of fabricated devices. The proposed method in this paper will be very useful for analyzing electrical characteristics of VDMOST and VIGBT.