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- 저자 : Lebedinskii, Y.Y. (검색결과 2 건)
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Kochervinskii, V.V.,Chubunova, E.V.,Lebedinskii, Y.Y.,Pavlov, A.S.,Pakuro, N.I. Techno-Press 2015 Advances in materials research Vol.4 No.2
The phenomena of high-voltage polarization and conductivity in oriented vinylidenefluoride and tetrafluoroethylene copolymer films have been investigated. It was shown that under certain electric fields, injection of carriers from the material of electrodes appears The barrier for holes injection in the copolymer was found to be lower than that for electrons. It results in more effective screening of the external field near the anode than near cathode. Electrones, ejected from cathode, creating negative charge by trapping on the surface. It is shown that the electrons injected from cathodes create a negative homocharge on the copolymer surface and then become captured on the surface shallow traps. Their nature has been studied by the x-ray photoelectron spectroscopy. It was shown that these traps may consist of chemical defects in the form of new functional groups formed by reactions of surface macromolecules with sputtered atoms of aluminum. The asymmetric shape of hysteresis curves was explained by the difference in mobility of injected holes and electrons. These factors caused appearance of "non-closed" hysteresis curves for fluorine-containing polymer ferroelectrics. Hysteresis phenomena observed at low electric fields (below coercive ones) are to associate with the behavior of the domains localized in the ordered regions formed during secondary crystallization of copolymers.
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Egorov, Konstantin V.,Kuzmichev, Dmitry S.,Chizhov, Pavel S.,Lebedinskii, Yuri Yu.,Hwang, Cheol Seong,Markeev, Andrey M. American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.15
<P>The plasma-enhanced atomic layer deposition (PEALD) process using Ta(OC2H5), as a Ta precursor and plasma-activated hydrogen as a reactant for the deposition of TaOx films with a controllable concentration of oxygen vacancies (V-o) is reported herein. The V-o concentration control was achieved by varying the hydrogen volume fraction of the hydrogen-argon mixture in the plasma, allowing the control of the leakage current density in the tantalum oxide films within the range of 5 orders of magnitude compared with the Ta2O5 film grown via thermal ALD using the identical Ta precursor and H2O. Temperature-dependent current-voltage measurements combined with Poole-Frenkel emission modeling demonstrated that the bulk trap depth decreases with the increasing hydrogen volume fraction, which could be attributed to the increase of the V-o concentration. The possible chemical change in the PEALD TaOx films grown under different hydrogen volume fractions was confirmed by the in situ X-ray photoelectron spectroscopy (XPS) measurements of the Ta 4f core and valence band spectra. The comparison of the XPS-measured nonstoichiometry and the secondary ion mass spectrometry analysis of the hydrogen content allowed this study to conclude that the nonstoichiometry is largely related to the formation of Ta-V-o sites rather than of Ta-H sites. Such oxygen-deficient TaOx layers were studied for application as an oxygen-deficient layer in a resistance switching random access memory stack (Ta2O5/TaOx) where the actual switching occurred within the stoichiometric Ta2O5 layer. The bilayer memory stack showed reliable resistance switching up to similar to 10(6) switching cycles, whereas the single-layer Ta2O5 memory showed only several hundred switching cycles.</P>
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