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Charge Distribution in Double Quantum Dot
P. Fulde,Nguyen Van Hieu,Le Viet Du Khuong,Nguyen Bich Ha 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.5
The charge distribution in multidot systems with the electron tunneling between them as well as the Coulomb interaction of electrons in the presence of the bias voltage applied to the gates of the quantum dots (QDs) are studied theoretically. The analytical expressions of the electron occupation numbers - the time-averaged expectation values of the electron number operators in the QDs are derived exactly. They depend on the physical parameters of the QDs, the effective coupling constant of the electron tunneling between the QDs, the temperature and the bias voltage applied to the gates of QDs. The measurement of these electron occupation numbers would be a practical method for the determination of the effective coupling constant of the electron tunneling and other physical parameters of the system. The charge distribution in multidot systems with the electron tunneling between them as well as the Coulomb interaction of electrons in the presence of the bias voltage applied to the gates of the quantum dots (QDs) are studied theoretically. The analytical expressions of the electron occupation numbers - the time-averaged expectation values of the electron number operators in the QDs are derived exactly. They depend on the physical parameters of the QDs, the effective coupling constant of the electron tunneling between the QDs, the temperature and the bias voltage applied to the gates of QDs. The measurement of these electron occupation numbers would be a practical method for the determination of the effective coupling constant of the electron tunneling and other physical parameters of the system.