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Chemical Beam Epitaxial Growth of InP and GaP by Using Tertiarybutylbis (Dimethylamino) Phosphine
류혁현,Cho-Rong Kim,Gerald Stringfellow,Jaeyeop Lee,Jae-Young Leem,Laurence Sadwick 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III
We report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE) technique with the group V source tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The photoluminescence spectra at 15 K showed that the intensity of a peak attributed to impurity recombination and the FWHM increased significantly when the cracker temperature exceed 545 $^\circ$C. This paper also reports the growth of GaP without precracking of the TBBDMAP source. While it was not possible to grow InP at 450 $^\circ$C, GaP was successfully grown at temperatures as low as 410 $^\circ$C, possibly due to the higher Ga-P bond strength which gives a longer TBBDMAP residence time on the surface before desorption. In this study, ethyldimethylindium (EDMIn) and triisopropylgallium (TlPGa) were used as the indium (In) and the gallium (Ga) sources, respectively.