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Shaida Anwer Kakil,Barzan Nehmat Sabr,Lary Slewa Hana,Tariq Abdul-Hameed Abbas,Sarwin Yaseen Hussin 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.5
The present study focuses on the in uence of gamma irradiation induced through the morphology effects on the modification of the optical and the electrical properties of transparent indium tin oxide (ITO) thin films. The prepared samples were exposed to low gamma radiation at room temperature with doses 3.90 Gy, 7.81Gy, 11.7 Gy, and 15.62 Gy from a Cs-137 radioisotope source. The surface structures before and after irradiation were analyzed. Atomic force microscopy was performed on two samples, one before and one after irradiation, to investigate any change in the morphology. The roughness parameters, such as Sz, Sv, Sc, and Sq, were found for the surface of the porous films after the gamma irradiation. As the dose of the irradiation was increased, the light absorption of the films increased, and the value of the optical energy gap changed from 3.83 to 3.73 eV while the refractive index changed from 1.9 to 2.05, as determined by using the Swanipol method. Electrical properties, such as the electrical sheet resistance, contact resistance, and current transfer length, were measured by using the four-point probe and the transmission line method (TLM). The determined electrical sheet resistance, contact resistance, and current transfer length were 14.54 , 0.235 , and 0.04 mm before gamma irradiation and 17.61 , 0.1316 , and 0.0025 mm after gamma irradiation. The decrease in the value of the contact resistance due to the irradiation led to a decrease in the current loss while the increase in the sheet resistance will cause the loss of some current through the film.