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Jung, H.,Kim, W. H.,Oh, I. K.,Lee, C. W.,Lansalot-Matras, C.,Lee, S. J.,Myoung, J. M.,Lee, H. B.,Kim, H. Springer Science + Business Media 2016 JOURNAL OF MATERIALS SCIENCE - Vol.51 No.11
<P>The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)(2)](2) as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of similar to 4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of similar to 1.3 cycle(-1) without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In-Ga-Zn-O thin-film transistors, and they both showed good device performances in terms of high I (on) - I (off) ratios (> 10(8)) and low off-currents (< 10(-11) A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative V (th) shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface.</P>
Hydrophobicity of Rare Earth Oxides Grown by Atomic Layer Deposition
Oh, Il-Kwon,Kim, Kangsik,Lee, Zonghoon,Ko, Kyung Yong,Lee, Chang-Wan,Lee, Su Jeong,Myung, Jae Min,Lansalot-Matras, Clement,Noh, Wontae,Dussarrat, Christian,Kim, Hyungjun,Lee, Han-Bo-Ram American Chemical Society 2015 Chemistry of materials Vol.27 No.1
<P>Rare earth oxide (REO) atomic layer deposition (ALD) processes are investigated for hydrophobic coatings. Thermal and plasma-enhanced ALD (PE-ALD) Er<SUB>2</SUB>O<SUB>3</SUB> and Dy<SUB>2</SUB>O<SUB>3</SUB> are developed using the newly synthesized Er and Dy precursors bis-methylcyclopentadienyl-diisopropyl-acetamidinate-erbium and bis-isopropylcyclopentadienyl-diisopropyl-acetamidinate-dysprosium, with H<SUB>2</SUB>O and O<SUB>2</SUB> plasma counter oxidants. The Er and Dy precursors show typical ALD growth characteristics with no nucleation incubation, indicating that they are suitable ALD precursors. The hydrophobicities of ALD-grown Er<SUB>2</SUB>O<SUB>3</SUB> and Dy<SUB>2</SUB>O<SUB>3</SUB> are investigated, together with those of ALD-grown Y<SUB>2</SUB>O<SUB>3</SUB>, La<SUB>2</SUB>O<SUB>3</SUB>, and CeO<SUB>2</SUB> that were previously developed for high-k applications. All the ALD-grown REOs show high hydrophobicity, with water contact angles as high as 90°. After annealing at 500 °C in air for 2 h, hydrophobicity is degraded depending on the kind of material; this degradation is related to the hygroscopy of REOs. In addition, we demonstrate the fabrication of a superhydrophobic surface by depositing highly conformal ALD REO films on 3D Si nanowire nanostructures. The Si NWs are conformally coated with ALD Y<SUB>2</SUB>O<SUB>3</SUB>, yielding a surface with a water contact angle of about 158°. The ALD REOs reported herein should find widespread applicability in the fabrication of robust hydrophobic coatings.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2015/cmatex.2015.27.issue-1/cm503659d/production/images/medium/cm-2014-03659d_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/cm503659d'>ACS Electronic Supporting Info</A></P>
Song, Seul Ji,Park, Taehyung,Yoon, Kyung Jean,Yoon, Jung Ho,Kwon, Dae Eun,Noh, Wontae,Lansalot-Matras, Clement,Gatineau, Satoko,Lee, Han-Koo,Gautam, Sanjeev,Cho, Deok-Yong,Lee, Sang Woon,Hwang, Cheol American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.1
<P>The growth characteristics of Ta2O5 thin films by atomic layer deposition (ALD) were examined using Ta((NBu)-Bu-t)(NEt2)3 (TBTDET) and Ta((NBu)-Bu-t)(NEt2)(2)Cp (TBDETCp) as Ta-precursors, where tBu, Et, and Cp represent tert-butyl, ethyl, and cyclopentadienyl groups, respectively, along with water vapor as oxygen source. The grown Ta2O5 films were amorphous with very smooth surface morphology for both the Ta-precursors. The saturated ALD growth rates of Ta2O5 films were 0.77 angstrom cycle(-1) at 250 degrees C and 0.67 angstrom cycle(-1) at 300 degrees C using TBTDET and TBDETCp precursors, respectively. The thermal decomposition of the amido ligand (NEt2) limited the ALD process temperature below 275 degrees C for TBTDET precursor. However, the ALD temperature window could be extended up to 325 degrees C due to a strong Ta-Cp bond for the TBDETCp precursor. Because of the improved thermal stability of TBDETCp precursor, excellent nonuniformity of similar to 2% in 200 mm wafer could be achieved with a step coverage of similar to 90% in a deep hole structure (aspect ratio 5:1) which is promising for 3-dimensional architecture to form high density memories. Nonetheless, a rather high concentration (similar to 7 at. %) of carbon impurities was incorporated into the Ta2O5 film using TBDETCp, which was possibly due to readsorption of dissociated ligands as small organic molecules in the growth of Ta2O5 film by ALD. Despite the presence of high carbon concentration which might be an origin of large leakage current under electric fields, the Ta2O5 film using TBDETCp showed a promising resistive switching performance with an endurance cycle as high as similar to 17?500 for resistance switching random access memory application. The optical refractive index of the deposited Ta2O5 films was 2.1-2.2 at 632.8 nm using both the Ta-precursors, and indirect optical band gap was estimated to be similar to 4.1 eV for both the cases.</P>
Reaction Mechanism Underlying Atomic Layer Deposition of Antimony Telluride Thin Films
Han, Byeol,Kim, Yu-Jin,Park, Jae-Min,Yusup, Luchana L.,Ishii, Hana,Lansalot-Matras, Clement,Lee, Won-Jun American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.5
<P>The mechanism underlying the deposition of SbTe films by alternating exposures to Sb(NMe2)(3) and Te(GeMe3)(2) was investigated. Sb(NMe2)(3) and Te(GeMe3)(2) were selected because they have very high vapor pressure and are free of Si, Cl, and O atoms in the molecules. The mechanism of deposition was proposed by density functional theory (DFT) calculation and was verified by in-situ quartz crystal microbalance (QCM) analysis. DFT calculation expected the ligand-exchange reactions between the Sb and Te precursors to form Me2NGeMe3 as the byproduct. QCM analysis indicated that a single -NMe2 group in Sb(NMe2)(3) reacts with -TeGeMe3 on the surface to form an Sb2Te3 film, and that a small fraction of Sb is incorporated into the film by the thermal decomposition of Sb(NMe2)(3). The Te(GeMe3)(2) molecules were thermally stable up to 120 degrees C, while the Sb(NMe2)(3) molecules decomposed at temperatures of 60 degrees C and higher. Sb-rich SbTe films with different Sb contents were prepared by controlling the partial decomposition of Sb(NMe2)(3) molecules, which was enhanced by increasing the pulse time of the precursor.</P>
Lee, Woongkyu,Han, Jeong Hwan,Jeon, Woojin,Yoo, Yeon Woo,Lee, Sang Woon,Kim, Seong Keun,Ko, Chang-Hee,Lansalot-Matras, Clement,Hwang, Cheol Seong American Chemical Society 2013 Chemistry of materials Vol.25 No.6
<P>The characteristics of the atomic layer deposition (ALD) of SrTiO<SUB>3</SUB> (STO) films were examined for metal–insulator–metal capacitors, with Cp-based precursors Sr(iPr<SUB>3</SUB>Cp)<SUB>2</SUB> and Cp*Ti(OMe)<SUB>3</SUB> [Cp* = C<SUB>5</SUB>(CH<SUB>3</SUB>)<SUB>5</SUB>] employed as the Sr and Ti precursors, respectively. While the Sr precursor has a higher reactivity toward oxygen on the Ru substrate compared with another Ti precursor, with a 2,2,6,6-tetramethyl-3,5-heptanedionato ligand, which results in the highly Sr excessive STO film, the enhanced reactivity of the present Ti precursor suppressed the unwanted excessive incorporation of Sr into the film. A possible mechanism for the Sr overgrowth and retardation is suggested in detail. By controlling the subcycle ratio of SrO and TiO<SUB>2</SUB> layers, stoichiometric STO could be obtained, even without employing a deleterious reaction barrier layer. This improved the attainable minimum equivalent oxide thickness of the Pt/STO/RuO<SUB>2</SUB> capacitor to 0.43 nm, with acceptable leakage current density (∼8 × 10<SUP>–8</SUP> A/cm<SUP>2</SUP>). This indicates an improvement of ∼25% in the capacitance density compared with previous work.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2013/cmatex.2013.25.issue-6/cm304125e/production/images/medium/cm-2012-04125e_0015.gif'></P>
Song, Jeong-Gyu,Park, Jusang,Lee, Wonseon,Choi, Taejin,Jung, Hanearl,Lee, Chang Wan,Hwang, Sung-Hwan,Myoung, Jae Min,Jung, Jae-Hoon,Kim, Soo-Hyun,Lansalot-Matras, Clement,Kim, Hyungjun American Chemical Society 2013 ACS NANO Vol.7 No.12
<P>The synthesis of atomically thin transition-metal disulfides (MS<SUB>2</SUB>) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS<SUB>2</SUB> nanosheets through the sulfurization of an atomic layer deposition (ALD) WO<SUB>3</SUB> film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the ALD-based WS<SUB>2</SUB> nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS<SUB>2</SUB> measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS<SUB>2</SUB>, and the subthreshold swing is comparable to that of an exfoliated MoS<SUB>2</SUB> FET device. Moreover, by utilizing the high conformality of the ALD process, we have developed a process for the fabrication of WS<SUB>2</SUB> nanotubes.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2013/ancac3.2013.7.issue-12/nn405194e/production/images/medium/nn-2013-05194e_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn405194e'>ACS Electronic Supporting Info</A></P>