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Radiation effect on the polymer-based capacitive relative humidity sensors
Shchemerov I.V.,Legotin S.A.,Lagov P.B.,Pavlov Y.S.,Tapero K.I.,Petrov A.S.,Sidelev A.V.,Stolbunov V.S.,Kulevoy T.V.,Letovaltseva M.E.,Murashev V.N.,Konovalov M.P.,Kirilov V.N. 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.8
The sensitivity of polymer-based capacitive relative humidity (RH) sensors after irradiation with neutrons, electrons and protons was measured. Degradation consists of the decreasing of the upper RH limit that can be measured. At the same time, low RH-level sensitivity is almost stable. After 30 krad of absorption dose, RH cut off is equal to 85% of max value, after 60 krade40%. Degradation reduces after annealing which indicates high radiation sensitivity of the internal circuit in comparison to RH-sensing polymer film
Deep Electron and Hole Traps in Electron-Irradiated Green GaN/InGaN Light Emitting Diodes
Lee, In-Hwan,Polyakov, A. Y.,Smirnov, N. B.,Shchemerov, I. V.,Chung, Tae-Hoon,Lagov, P. B.,Zinov'ev, R. A.,Pearton, S. J. The Electrochemical Society 2017 ECS journal of solid state science and technology Vol.6 No.10
<P>Deep electron and hole trap spectra and electroluminescence (EL) efficiency of green multi-quantum-well (MQW) GaN/InGaN light emitting diodes were measured before and after 6 MeV electron irradiation. Starting with a fluence of 5 × 10<SUP>15</SUP> cm<SUP>−2</SUP>, electron irradiation increased the concentration of existing electron traps with levels at E<SUB>c</SUB>−0.5 eV and introduced new electron traps with levels near E<SUB>c</SUB>−1 eV. The latter are the well known radiation defects formed in the GaN barriers of the GaN/InGaN MQW region. The degradation of the EL efficiency after irradiation correlates with changes of the E<SUB>c</SUB>−0.5 eV and E<SUB>c</SUB>−1 eV electron trap density, suggesting these are effective non-radiative recombination centers. By sharp contrast, the concentration of the dominant hole traps with levels near E<SUB>v</SUB>+0.45 eV decreased after, which eliminates these from the role of Shockley-Read-Hall defects actively participating in recombination.</P>