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Functional-power-aware Partial Gating Method for Low Power Scan-shift
Kyongjun Noh,Tae Hee Lee,Jun-Dong Cho 대한전자공학회 2018 Journal of semiconductor technology and science Vol.18 No.1
This paper presents a new scheme to minimize scan-shift power for test reliability with minimized functional power overhead, which is achieved by selective insertion of signal gating-logic considering the loading condition and switching activity of scan shift signals. The proposed methodology also considers practical design issues such as logic-timing overhead and cell-congestion impact associated with scan-shift power reduction. In experimental results with industrial system-on-chip (SoC) designs, the proposed power-aware gating-logic-insertion methodology not only achieved reduction of scan-shift power but also improved functional power up to 10% compared with the conventional full-scan gating scheme.
Yoo, Kyongjun,Jeon, Byung-Gu,Chun, Sae Hwan,Patil, Deepak Rajaram,Lim, Yong-jun,Noh, Seung-hyun,Gil, Jihyo,Cheon, Jinwoo,Kim, Kee Hoon American Chemical Society 2016 NANO LETTERS Vol.16 No.12
<P>Bulk magnetite (Fe3O4), the loadstone used in magnetic compasses, has been known to exhibit magnetoelectric (ME) properties below similar to 10 K; however, corresponding ME effects in Fe3O4 nanoparticles have been enigmatic. We investigate quantitatively the ME coupling of spherical Fe3O4 nanoparticles with uniform diameters (d) from 3 to 15 nm embedded in an insulating host, using a sensitive ME susceptometer. The intrinsic ME susceptibility (MES) of the Fe3O4 nanoparticles is measured, exhibiting a maximum value of similar to 0.6 ps/m at 5 K for d = 15 nm. We found that the MES is reduced with reduced d but remains finite until d = nm, which is close to the critical thickness for observing the Verwey transition. Moreover, with reduced diameter the critical temperature below which the MES becomes conspicuous increased systematically from 9.8 K in the bulk to 19.7 K in the nanoparticles with d = 7 nm, reflecting the core-shell effect on the ME properties. These results point to a new pathway for investigating ME effect in various nanomaterials.</P>