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Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA)
Kouya Sugihara,Kiyoharu Shimoda,Tatsuya Okada,Takashi Noguchi 한국정보디스플레이학회 2017 Journal of information display Vol.18 No.4
Blue-laser-diode annealing (BLDA) in the continuous wavemodewas performed for sputtered silicon (Si) films. Polycrystalline silicon (poly-Si) thin-film transistors (TFTs) were fabricated on a glass substrate. For the source and drain formation, titanium (Ti) was evaporated to make the metal directly contact the channel Si film without adopting n+ doping. The improvement of the drain current was confirmed after hydrogen annealing at 400°C, and the typical poly-Si TFT characteristic with 50 cm2/Vs deduced effective carrier mobility was successfully observed. As the low-cost TFT fabrication without ion implantation becomes feasible, the low-temperature fabrication of poly-Si TFTs using BLDA is expected.
Crystallization of a-Si Films with Smooth Surfaces by Using Blue Multi-Laser Diode Annealing
Tatsuya Okada,Kouya Sugihara,Satoshi Chinen,Takashi Noguchi 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.8
Crystallization of ∼50-nm-thick amorphous Si (a-Si) with a smooth surface was achieved by using Blue Multi-Laser Diode Annealing (BLDA). The a-Si films were deposited by using RF sputtering with Ne gas or by using plasma enhanced chemical vapor deposition (PE-CVD) and were annealed by using BLDA with CW scanning. After the films had been annealed a relatively low laser power below 4 W, the root-mean-square (RMS) roughness deduced from the atomic force microscopy (AFM) results for the surfaces of the Si films was slightly increased, but smoothness was within 3 nm despite the conditions under which the films had been crystallized. BLDA has a potential to realize next-generation poly-Si thin film transistors (TFTs).