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Reliability-Based Topology Optimization for Different Engineering Applications
Kharmanda, G.,Lambert, S.,Kourdi, N.,Daboul, A.,Elhami, A. Society for Computational Design and Engineering 2007 International Journal of CAD/CAM Vol.7 No.1
The objective of this work is to integrate reliability analysis into topology optimization problems. We introduce the reliability constraint in the topology optimization formulation, and the new model is called Reliability-Based Topology Optimization (RBTO). The application of the RBTO model gives a different topology relative to the classical topology optimization that should be deterministic. When comparing the structures resulting from the deterministic topology optimization and from the RBTO model, the RBTO model yields structures that are more reliable than the deterministic ones (for the same weight). Several applications show the importance of this integration.
Makrina Zafiri,Evangelos Kourdis 한국외국어대학교 HK 세미오시스 연구센터 2017 Signs and Society Vol.5 No.1
Interlingual translation, intersemiotic translation, and mediation seem to be the main means by which students who are learning English as a foreign language in Greece connect the learning of English as a foreign language and Greek as a mother tongue. This research probes into the teaching of English in Greek state schools and more specifically the teaching of English, as a foreign language, in the first year of junior high school. The research attempts to evaluate the authors’ choices of visual iconic messages that promote the Greek culture and language, the students’ mother tongue, as a means of mediation—mostly through interlingual translation—to familiarize them with the target language and culture, namely, the English language and culture. The fact that the visual iconic and verbal signs under scrutiny are all derived from a textbook published by the Greek Ministry of Education, Research and Religious Affairs gives more significance to the specific signs (thus legitimizing them).
M. Khaouani,H. Bencherif,A. Hamdoune,A. Belarbi,Z. Kourdi 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3 Al0.7 As/InAs/InSb/In0.3 Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature eff ect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage ( V th ), transconductance ( g m ), and I on / I off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of −1.75 V, a high value of transconductance g m of 650 mS/mm, I on / I off ratio of 1 × 10 6 , a transition frequency ( f t ) of 790 GHz, and a maximum frequency ( f max ) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g m , and I on / I off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.