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Keisuke Ohdaira,Takafumi Oikawa,Koichi Higashimine,Hideki Matsumura 한국물리학회 2016 Current Applied Physics Vol.16 No.9
The epitaxial growth of silicon (Si) films during the catalytic chemical vapor deposition (Cat-CVD) of intrinsic amorphous Si (i-a-Si) passivation films on crystalline Si (c-Si) wafers is suppressed by the oxidation of c-Si surfaces simply by dipping the c-Si wafers in hydrogen peroxide (H2O2). This oxidation treatment is also effective for (111)-oriented c-Si surfaces particularly at high a-Si deposition temperatures. The suppression of the epitaxial growth leads to the better effective minority carrier lifetime (teff) of c-Si wafers passivated with Cat-CVD i-a-Si films. SHJ solar cells show remarkably high open-circuit voltage (Voc) exceeding 0.7 V. These results clearly show the effectiveness of the insertion of SiOx layers on the improvement in Cat-CVD a-Si/c-Si interfaces.
Application of crystalline silicon surface oxidation to silicon heterojunction solar cells
Takafumi Oikawa,Keisuke Ohdaira,Koichi Higashimine,Hideki Matsumura 한국물리학회 2015 Current Applied Physics Vol.15 No.10
We study the effect of ultra-thin oxide (SiOx) layers inserted at the interfaces of silicon heterojunction (SHJ) solar cells on their open-circuit voltage (VOC). The SiOx layers can be easily formed by dipping c-Si into oxidant such as hydrogen peroxide (H2O2) and nitric acid (HNO3). We confirm the prevention of the undesirable epitaxial growth of Si layers during the deposition of a-Si films by the insertion of the ultrathin SiOx layers. The formation of the SiOx layers by H2O2 leads to better effective minority carrier lifetime (teff) and VOC than the case of using HNO3. c-Si with the ultra-thin SiOx layers formed by H2O2 dipping, prior to deposition of a-Si passivation layers, can have high implied VOC of up to ~0.714 V.