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- 저자 : Kjell Jeppson (검색결과 2 건)
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Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics Manufacturing
Jie Bao,Kjell Jeppson,Michael Edwards,Yifeng Fu,Lilei Ye,Xiuzhen Lu,Johan Liu 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.1
In similarity to graphene, two-dimensional (2D) hexagonal boronnitride (hBN) has some remarkable properties, such as mechanicalrobustness and high thermal conductivity. In addition, hBN has superbchemical stability and it is electrically insulating. 2D hBN has beenconsidered a promising material for many applications in electronics,including 2D hBN based substrates, gate dielectrics for graphenetransistors and interconnects, and electronic packaging insulators. Thispaper reviews the synthesis, transfer and fabrication of 2D hBN films,hBN based composites and hBN-based van der Waals heterostructures. In particular, this review focuses on applications in manufacturingelectronic devices where the insulating and thermal properties of hBNcan potentially be exploited. 2D hBN and related composite systems areemerging as new and industrially important materials, which couldaddress many challenges in future complex electronics devices and systems.
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Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-Walled Carbon Nanotubes
Wei Mu,곽은혜,Bingan Chen,Shirong Huang,Michael Edwards,Yifeng Fu,Kjell Jeppson,Kenneth Teo,정구환,Johan Liu 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.3
Synthesisof horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) bychemical vapor deposition (CVD) directly on quartz seems very promising for thefabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesisof HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, coolingand growth periods, but also prevents contamination of the chamber. However, sincemost synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this wellestablishedprocess to a cold-wall chamber becomes extremely crucial. Here, in orderto transfer the CVD growth technology from a hot-wall to a cold-wall chamber, asystematic investigation has been conducted to determine the influence of processparameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVDchamber was upgraded with a top heater to complement the bottom substrate heater;the first reason to maintain a more uniform temperature profile during HA-SWCNTsgrowth, and the second reason to preheat the precursor gas flow before projecting itonto the catalyst. Our results show that the addition of a top heater had a significanteffect on the synthesis. Characterization of the CNTs shows that the average density ofHA-SWCNTs is around 1 - 2 tubes/μm with high growth quality as shown by Ramananalysis.
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