http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ruchika Sharma,Kiran Sehrawat,R.M. Mehra 한국물리학회 2010 Current Applied Physics Vol.10 No.1
Highly transparent and conductive scandium doped zinc oxide (ZnO:Sc) films were deposited on c-plane sapphire substrates by sol.gel technique using zinc acetate dihydrate [Zn(CH3COO)2·2H2O] as precursor,2-methoxyethanol as solvent and monoethanolamine as a stabilizer. The doping with scandium is achieved by adding 0.5 wt% of scandium nitrate hexahydrate [(ScNO3·6H2O)] in the solution. The influence of annealing temperature (300-550 ℃) on the structural, optical and electrical properties was investigated. X-ray Diffraction study revealed that highly c-axis oriented films with full-width half maximum of 0.16˚ are obtained at an annealing temperature of 400 ℃. The surface morphology of the films was judged by SEM and AFM images which indicated formation of grains. The average transmittance was found to be above 92% in the visible region. ZnO:Sc film, annealed at 400 ℃ exhibited minimum resistivity of 1.91 × 10-4 Ω cm. Room-temperature photoluminescence measurements of the ZnO:Sc films annealed at 400 ℃ showed ultraviolet peak at ~3.31eV with a FWHM of 11.2 meV, which are comparable to those found in high-quality ZnO films. Reflection high-energy electron diffraction pattern confirmed the epitaxial nature of the films even without introducing any buffer layer.