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Yokoyama, Yoshie,Jelenkovic, Aline,Sund, Reijo,Sung, Joohon,Hopper, John L.,Ooki, Syuichi,Heikkilä,, Kauko,Aaltonen, Sari,Tarnoki, Adam D.,Tarnoki, David L.,Willemsen, Gonneke,Bartels, Meike,van B Cambridge University Press 2016 TWIN RESEARCH AND HUMAN GENETICS - Vol.19 No.2
<P>We analyzed birth order differences in means and variances of height and body mass index (BMI) in monozygotic (MZ) and dizygotic (DZ) twins from infancy to old age. The data were derived from the international CODATwins database. The total number of height and BMI measures from 0.5 to 79.5 years of age was 397,466. As expected, first-born twins had greater birth weight than second-born twins. With respect to height, first-born twins were slightly taller than second-born twins in childhood. After adjusting the results for birth weight, the birth order differences decreased and were no longer statistically significant. First-born twins had greater BMI than the second-born twins over childhood and adolescence. After adjusting the results for birth weight, birth order was still associated with BMI until 12 years of age. No interaction effect between birth order and zygosity was found. Only limited evidence was found that birth order influenced variances of height or BMI. The results were similar among boys and girls and also in MZ and DZ twins. Overall, the differences in height and BMI between first- and second-born twins were modest even in early childhood, while adjustment for birth weight reduced the birth order differences but did not remove them for BMI.</P>
Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients
Huh, Junghwan,Yun, Hoyeol,Kim, Dong-Chul,Munshi, A. Mazid,Dheeraj, Dasa L.,Kauko, Hanne,van Helvoort, Antonius T. J.,Lee, SangWook,Fimland, Bjørn-Ove,Weman, Helge American Chemical Society 2015 NANO LETTERS Vol.15 No.6
<P>Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p–n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2015/nalefd.2015.15.issue-6/acs.nanolett.5b00089/production/images/medium/nl-2015-00089f_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl5b00089'>ACS Electronic Supporting Info</A></P>