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Fabrication of p-n Junction Diode Using SnO/SnO2 Thin Films and Its Device Characteristics
R. Sathyamoorthy,K. M. Abhirami,B. Gokul,Sanjeev Gautam,채근화,K. Asokan 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.4
Present study demonstrates the feasibility of using oxides of Sn to fabricate the p-n junction diode and reports the device characteristics. Reactive thermal evaporation method was used to fabricate the p-type SnO and n-type SnO2 multilayer thin films. The x-ray diffraction (XRD) and Raman spectra depict the presence of both SnO and SnO2 layers. The interface of the p-n junction analyzed by cross-sectional transmission electron microscope (TEM) images and selected area electron diffraction (SAED) pattern confirmed the presence of SnO-SnO2 layers. The diode shows rectifying current-voltage characteristics with forward threshold voltage of 3.5 V.