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Deposition of Fine Linewidth Silver Layer using a Modified Laser-induced Forward Transfer Technique
Cheon, Jonggyu,Nguyen, Manh-Cuong,Nguyen, An Hoang-Thuy,Choi, Sujin,Ji, Hyung-Min,Kim, Sang-Woo,Yu, Kyoung-Moon,Kim, Jin-Hyun,Cho, Seong-Yong,Choi, Rino 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.9
Manh-Cuong Nguyen,An Hoang-Thuy Nguyen,Hyungmin Ji,Sujin Choi,Jonggyu Cheon,Kyoung-Moon Yu,Seong-Yong Cho,Jin-Hyun Kim,Sang-Woo Kim,Rino Choi 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.5
The trap energy profile of top gate In-Ga-Zn-O (IGZO) thin film transistors was extracted suc- cessfully using a transmission line model incorporating the conductance method. By implementing the transmission line model method into the conventional conductance method, we were able to evaluate the contact resistance and the channel length modulation precisely and to decouple them to obtain the intrinsic channel conductance. The observed conductance over the angular frequency was almost perfectly symmetrical, which is observed only in the ideal conductance method. Finally, a shallow trap profile, including the trap density and time constant near the conduction band edge of IGZO, was extracted successfully.
Nguyen, Manh-Cuong,Nguyen, An Hoang Thuy,Ji, Hyungmin,Cheon, Jonggyu,Kim, Jin-Hyun,Yu, Kyoung-Moon,Cho, Seong-Yong,Kim, Sang-Woo,Choi, Rino Institute of Electrical and Electronics Engineers 2018 IEEE transactions on electron devices Vol. No.
<P>A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal–oxide–semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.</P>
Nguyen, Manh-Cuong,On, Nuri,Ji, Hyungmin,Nguyen, An Hoang-Thuy,Choi, Sujin,Cheon, Jonggyu,Yu, Kyoung-Moon,Cho, Seong-Yong,Kim, JinHyun,Kim, Sangwoo,Jeong, Jaekyeong,Choi, Rino Institute of Electrical and Electronics Engineers 2018 IEEE transactions on electron devices Vol.65 No.6
<P>The self-heating effect (SHE) in top-gate In–Ga–Zn–O (IGZO) thin-film transistors (TFTs) was examined systematically using short electrical pulse measurement methods. The temperature dependence of the pulse measurements of IGZO TFTs revealed a significant increase in temperature during the measurements, suggesting that conventional measurements can overestimate the device performance significantly. The effective temperature was introduced and extracted for IGZO TFTs at various heating powers and ambient temperatures. The short sampling time was determined to be a key in characterizing the intrinsic device properties that are not influenced by the SHE. The cooling behavior after self-heating was also examined using multipulse measurements. Because heating and cooling are significant even in a very short time, it is essential to consider the operation condition of the devices when characterizing TFTs to estimate the precise performance and reliability in a real operation.</P>
Jae-Won Choi,Soo-Yeun Han,Manh-Cuong Nguyen,An Hoang-Thuy Nguyen,Jung Yeon Kim,Sujin Choi,Jonggyu Cheon,Hyungmin Ji,Rino Choi IEEE 2017 IEEE electron device letters Vol.38 No.9
<P>This letter reports the low-temperature solution-based fabrication of indium oxide (In2O3) thin-film transistors (TFTs) using a visible laser-assisted urea combustion process. An In2O3 precursor solution containing a small amount of urea absorbed the photon energy from a blue laser and started the combustion of urea to form a crystallized In2O3 phase. Atomic force microscopy and X-ray diffraction showed that both laser radiation and urea combustion together are necessary to convert a dried precursor solution layer to a crystallized In2O3 phase. A TFT fabricated from the 0.2-mol% urea-added solution and laser annealed with a 250-J/cm(2) energy fluence exhibited superior transfer characteristics compared with the TFTs fabricated either without urea addition or with small energy fluence radiation. Based on these results and considering the price of blue laser diodes, this technique can be an economical solution for the fabrication of oxide semiconductor TFTs on flexible substrates with a low melting point.</P>