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JongHyeobBaeK,HyunWooSong,SungBockKim,NamHwang,JehaKim,DaeKonOh 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.3
We investigated the degradation behaviors of 1310-nm spot-size converter integrated laser diodes (SSC-LDs) grown by using the metal-organic chemical-vapor deposition (MOCVD) method. The vertically tapered SSC and the active region employing a buried heterostructure were butt-jointed to each other. The characteristic temperature of the SSC-LD was compared with that of an LD without the SSC. All chips experienced the burn-in test before long-term life scanning. The slope eciencies of the SSC-LDs scarcely changed after the aging process, indicating that no further degradation accurred within the active region. This work focused mainly on the role of the SSC in device degradation behavior.