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Analytical Model for and Scale-Down E ect of a Floating Body Voltage in SOI MOSFETs
Jeong-HyongYi,Young-JunePark,HongShickMin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
Models for charge sharing and the body current of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs are proposed in order to extract the oating body voltage of devices under various operating conditions and for various device structure parameters. Also, an SOI simulator, incorporating the proposed models, is developed to predict the scaling properties of the oating body voltage, especially in the low voltage region.