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Carbon nanoflake growth from carbon nanotubes by hot filament chemical vapor deposition
Sahoo, S.C.,Mohapatra, D.R.,Lee, H.J.,Jejurikar, S.M.,Kim, I.,Lee, S.C.,Park, J.K.,Baik, Y.J.,Lee, W.S. Pergamon Press ; Elsevier Science Ltd 2014 Carbon Vol.67 No.-
We report the growth of carbon nanoflakes (CNFs) on Si substrate by the hot filament chemical vapor deposition without the substrate bias or the catalyst. CNFs were grown using the single wall carbon nanotubes and the multiwall carbon nanotubes as the nucleation center, in the Ar-rich CH<SUB>4</SUB>-H<SUB>2</SUB>-Ar precursor gas mixture with 1% CH<SUB>4</SUB>, at the chamber pressure and the substrate temperature of 7.5Torr and 840<SUP>o</SUP>C, respectively. In the H<SUB>2</SUB>-rich condition, CNF synthesis failed due to severe etch-removal of carbon nanotubes (CNTs) while it was successful at the optimized Ar-rich condition. Other forms of carbon such as nano-diamond or mesoporous carbon failed to serve as the nucleation centers for the CNF growth. We proposed a mechanism of the CNF synthesis from the CNTs, which involved the initial unzipping of CNTs by atomic hydrogen and subsequent nucleation and growth of CNFs from the unzipped portion of the graphene layers.