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최재우(Jaewoo Choi),엄현상(Hyeonsang Eom),염헌영(Heon Young Yeom) 한국정보과학회 2011 한국정보과학회 학술발표논문집 Vol.38 No.2A
SCST는 백엔드 스토리지의 I/O 인터페이스에 관계없이 해당 스토리지 디바이스를 SCSI의 타겟 시스템으로 인식할 수 있도록 만들어 주는 리눅스용 오픈 소스 프로그램이다. 이는 클라우드 스토리지 환경에서 사용자의 서로 다른 요구사항에 맞춰 적절한 스토리지 서비스를 제공할 수 있도록 하며 다양한 인터페이스를 가지는 스토리지 환경을 효율적으로 관리할 수 있도록 한다. 본 고에서는 클라우드 스토리지 환경에 대해 알아보고 SCST를 활용하여 효율적인 클라우드 스토리를 구축할 수 있는 방안에 대해서 살펴본다.
Controllable Nondegenerate p-Type Doping of Tungsten Diselenide by Octadecyltrichlorosilane
Kang, Dong-Ho,Shim, Jaewoo,Jang, Sung Kyu,Jeon, Jeaho,Jeon, Min Hwan,Yeom, Geun Young,Jung, Woo-Shik,Jang, Yun Hee,Lee, Sungjoo,Park, Jin-Hong American Chemical Society 2015 ACS NANO Vol.9 No.2
<P>Despite heightened interest in 2D transition-metal dichalcogenide (TMD) doping methods for future layered semiconductor devices, most doping research is currently limited to molybdenum disulfide (MoS<SUB>2</SUB>), which is generally used for n-channel 2D transistors. In addition, previously reported TMD doping techniques result in only high-level doping concentrations (degenerate) in which TMD materials behave as near-metallic layers. Here, we demonstrate a controllable nondegenerate p-type doping (p-doping) technique on tungsten diselenide (WSe<SUB>2</SUB>) for p-channel 2D transistors by adjusting the concentration of octadecyltrichlorosilane (OTS). This p-doping phenomenon originates from the methyl (−CH<SUB>3</SUB>) functional groups in OTS, which exhibit a positive pole and consequently reduce the electron carrier density in WSe<SUB>2</SUB>. The controlled p-doping levels are between 2.1 × 10<SUP>11</SUP> and 5.2 × 10<SUP>11</SUP> cm<SUP>–2</SUP> in the nondegenerate regime, where the performance parameters of WSe<SUB>2</SUB>-based electronic and optoelectronic devices can be properly designed or optimized (threshold voltage↑, on-/off-currents↑, field-effect mobility↑, photoresponsivity↓, and detectivity↓ as the doping level increases). The p-doping effect provided by OTS is sustained in ambient air for a long time showing small changes in the device performance (18–34% loss of Δ<I>V</I><SUB>TH</SUB> initially achieved by OTS doping for 60 h). Furthermore, performance degradation is almost completely recovered by additional thermal annealing at 120 °C. Through Raman spectroscopy and electrical/optical measurements, we have also confirmed that the OTS doping phenomenon is independent of the thickness of the WSe<SUB>2</SUB> films. We expect that our controllable p-doping method will make it possible to successfully integrate future layered semiconductor devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2015/ancac3.2015.9.issue-2/nn5074435/production/images/medium/nn-2014-074435_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn5074435'>ACS Electronic Supporting Info</A></P>