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Post-Growth Annealing Effects of In0.5Ga0.5As Quantum Dots Grown by Heterogeneous Droplet Epitaxy
ChangMyungLee,JooInLee,Jae-YoungLeem,Dong-HanLee,TakaakiMano,T.Tateno,NobuyukiKoguchi 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.1
Post-growth rapid thermal annealing modifies the structural and the optical properties of the In$_{0.5}$Ga$_{0.5}$As quantum dots grown on GaAs substrates by using heterogeneous droplet epitaxy. It is found that at annealing temperatures up to 750 $^\circ$C, a significant decrease in the intersublevel ($E_{01}=E_{1} - E_{0}$) from 55 to 23.7 meV occurs together with about a 62-meV blueshift. Also, we observe a decrease in the activation energy of about 200 meV. These results are explained by interdiffusion of In-Ga atoms at the interface between the QD and the GaAs barrier, which changes the composition of the QDs.
Optical Properties of InGaN/GaN Multiple Quantum Wells
JooInLee,ChangMyungLee,Jae-YoungLeem,Ki-SooLim,한일기 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.3
We have used steady-state and time-resolved photoluminescence to investigate optical properties of In0:13Ga0:87N/GaN multiple quantum wells (MQW) grown by using metalorganic chemical vapor deposition. The quantum well spectra were explained in terms of the radiative recombination of excitons in the localized states. Exciton formation of the InGaN MQW might be delayed for excitations above the GaN barrier excitation compared with exciton formation in excitations below the GaN barrier. The critical temperature at which nonradiative recombination dominantly occurred was increased under the excitation below the GaN barrier because screening caused by carriers in the GaN barrier vanished.
Structural Investigations of MBE-Grown InAs Layers on GaAs
Sung-ManKim,Sang-heonLee,HowoonKim,Jang-KyooShin,Jae-YoungLeem,Jong-SuKim,Jin-SooKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
High-quality InAs films were grown by varying GaAs the buffer layer thickness and using different substrates, both 2-tilted toward the [0 11] and non-tilted GaAs(100) substrate, by molecular beam epitaxy (MBE). Their electrical and structure properties were investigated by Hall measurements, transmission electron microscopy (TEM) and high-resolution X-ray diraction (HRXRD). The 0.5- m InAs film grown on a 2-tilted GaAs substrate and the 1-m InAs lm on non-tilted GaAs substrate had electron mobilities of 10,952 cm2/Vs and 11,944 cm2/Vs, respectively, with same Si doping concentration at room temperature. TEM images showed that high-quality InAs epitaxial layers were obtained with reduced dislocation density at the InAs/GaAs interface.