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Indium assisted hydride vapor phase epitaxy of GaN film
Guanghui Yu,Benliang Lei,Haohua Ye,Sheng Meng,Ming Qi,Aizhen Li,Jun Chen,Gerard Nouet,JPierre Ruterana 한양대학교 세라믹연구소 2006 Journal of Ceramic Processing Research Vol.7 No.2
In order to increase the migration length of adatoms in hydride vapor phase epitaxy (HVPE) of GaN films, indium was used as a surfactant in HVPE growth. For samples with indium, an increase of crystalline quality was confirmed by X-ray diffraction measurements, and an improvement of surface morphology was also observed. SIMS analysis showed that indium was incorporated in the as-grown GaN film, and indium related photoluminescence (PL) was also detected.