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Semiconductor Tin Oxide Gas Sensors : From Bulk to Thin Films
Mulla, Imtiaz Sirajuddin,Ramgir, Niranjan Suryakant,Hwang, Young Kyu,Chang, Jong-San 한국공업화학회 2004 Journal of Industrial and Engineering Chemistry Vol.10 No.7
Tin oxide an n-type semiconductor gas sensing material is widely accepted and under investigation in practically every form, from bulk to nano-structure. It is necessary to understand the ordering of crystal structure, morphology and arrangement of grains, importance of the surface effects and grain boundaries, and more importantly the working principle in order to visualize their potential as a sensor and electronic material. Therefore, it is necessary to consider each factor governing the sensitivity and selectivity prior to designing the sensor device. An ideal sensor with high mobility of conduction electrons and satisfactory stability needs fabrication of a highly porous, thin sensing body with a proper selection of doping element that can enhance surface reactions/adsorption of sensing gas. In the present report, we have tried to describe the recent progress in the tin oxide based gas sensors with some of our own findings.