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WookyungSun,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
In this paper, a modified charge pumping (CP) technique is proposed to determine the lateral distribution of the interface state density (Nit) near the drain junction of hot-carrier- stressed n- MOSFET's. Basically the rising and the falling slopes of the gate pulse are held constant, and the concept of \local threshold" and \local atband" voltages are used to extract the relationship between the measured Icp and the charge pumping edge. Several existing papers have proposed CP methods, but they have to differentiate the measured Icp data several times or require accurate doping proles for the channel and the S/D regions. Therefore, the distribution profile of Nit extracted by these method is not accurate. The new technique determines the charge pumping edge more exactly, and Nit can be extracted directly from experimental charge pumping results. Therefore, this method requires no information about impurity concentrations.
Reduction of Reverse Short-Channel E ect in High-Energy Implanted Retrograde Well
HyeokjaeLee,YoungJunePark,HongShickMin,HyungsoonShin,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
In this research, the reverse short channel eect (RSCE) is signicantly dierent in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the VTH is signicantly smaller in the HRW than in diused well. We investigate the in uence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.
Quantum Effects in CMOS Devices
Keun-JeongLee,Ji-SunPark,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
A MOSFET device is scaled to the deep sub-micron region in advanced VLSI system technology. If the short-channel effect is to be reduced and the device performance maximized in such device, the oxide thickness should be reduced and the substrate doping should be increased. As a result, a potential well is formed at the Si/SiO2 interface, and a quantum eect occurs. In this work, a new simulator, which predicts the quantum and the poly-depletion eects in a MOSFET structure, is developed. Using a self-consistent method, this simulator accurately predicts the carrier distribution because the calculation of the potential in the inversion layer is improved. Using the developed simulator, we compare the quantum eects in NMOS and PMOS, and analyze the differences. The oxide thickness and the channel doping dependences of the quantum eect are analyzed, and their causes are investigated. Also, buried-channel and surface-channel devices are compared, and the dierences and causes of the dierences are analyzed.
Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing
HyeokjaeLee,YoungJunePark,HongShickMin,이종호,HyungsoonShin,WookyungSun,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
The transconductance and the low-frequency noise of SOI MOSFETs with shallow trench isolation (STI) structures are investigated qualitatively for various device sizes and three dierent gate shapes. Devices with the channel region butted to the STI region show a reduction in the mobility and the increase in the low-frequency noise as the channel width is reduced. In comparison, the devices without STI butted channel region show a much lower reduction in the mobility and increase in the noise characteristics with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identied for the first time, as the cause of these anomalous phenomena.
Macro Model and Sense Amplifier for a MRAM
Ji-HyunKim,Jung-WhaLee,Seung-JunLee,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
For the simulation of the architecture for a magnetoresistive random access memory (MRAM) based on GMR (giant magnetoresistance) and a MTJ (magnetic tunnel junction) cell having a hysteretic characteristics, a macro model showing this hysteresis is required. Also, a new sense amplier is needed for the MRAM because the cell is destroyed at high voltages. Thus, this work presents a macro model and a sensing circuit for a MRAM. The macro model is realized by using a six-terminal subcircuit, which emulates the hysteretic nature of MRAM cell, and read/write simulations are possible. A current-source bit-line-clamped sense amplier maintains a low voltage on the bit line during the full VDD sensing, so it is suitable for sensing the MRAM cell.
Sung-JoonHong,HyunchulNah,YoungJunePark,HongShickMin,ChanhoLee,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
We show that the local thermal noise sources for the impedance eld method (IFM) can be calculated accurately using the Monte Carlo method (MC). Using the results from MC method, we investigate the accuracy of the conventional thermal noise sources used to calculate the noise with the IFM. The results for a 0.1 m N+-N-N+ device show that the conventional local thermal noise sources can be wrong for submicron devices. We also present the method of terminal noise calculation using an impedance eld which is suitable for the Monte Carlo method. This method is compared with the conventional method which uses the autocorrelation function in Monte Carlo method. The results show that the method using the impedance eld is very stable and fast numerically.
Investigation of Noise Characteristics of pn Diodes by Using a Device Simulator
HyunchulNah,Young-JunePark,HongShickMin,ChanhoLee,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
The noise characteristics of pn diodes obtained using a partial dierential equation (PDE) based device simulator with the transfer impedance method and the diffusion and the generationrecombination processes as the fundamental noise sources are investigated. From this approach, the noise behaviors over the entire operating region from the reverse to the very high forward bias regions for both long- and short-base diodes are obtained, and the results demonstrate good agreement with the previously reported data, except for the high forward bias region. A noise equivalent circuit model is introduced to explain the noise behaviors for that region and is proven to be useful for long-base diodes.