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Fabrication of SiC MESFET's for Microwave Applications
Ji-HakJung,HoonPark,Jin-KukPark,Hyun-ChangPark,Kwang-HyukBae,Dong-HyukShin,Nam-JinSong,Jin-WookBurm 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
4H-SiC MESFET's on conducting substrates were designed, fabricated, and DC characterized. An inductively coupled plasma etcher was developed and used for the channel recess etching of the MESFET. Fabricated MESFET's with 1-m gate lengths and 100-m gate widths showed a very high drain current density of 980 mA/mm and a maximum transconductance of 35 mS/mm, indicating a high potential for microwave power applications.
Design and Fabrication of a Low-Noise Amplifier for the V-Band
Tae-SinKang,Seong-DaeLee,Bok-HyoungLee,Sam-DongKim,Hyun-ChangPark,Hyung-MooPark,이진구 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.4
Millimeter-wave monolithic integrated circuit (MIMIC)-based V-band low-noise amplifiers (LNA) were fabricated using high-performance 0.1-$\mu$ $\Gamma$-shaped pseudomorphic high electron mobility transistors (PHEMT's), coplanar waveguide structures, and an integrated process for passive and active devices. The LNA was designed in a chip size of 2.3$\times$1.4 mm$^2$ by using 2-stage PHEMT's with two 70-$\mu$m fingers. A high $S_{21}$ gain of 14.9 dB and good matching at 60 GHz were achieved from the circuits, and a 20-dBm IP3 and 6.7-dB $NF_{min}$ were obtained from the LNA's.