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Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing
HyeokjaeLee,YoungJunePark,HongShickMin,이종호,HyungsoonShin,WookyungSun,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
The transconductance and the low-frequency noise of SOI MOSFETs with shallow trench isolation (STI) structures are investigated qualitatively for various device sizes and three dierent gate shapes. Devices with the channel region butted to the STI region show a reduction in the mobility and the increase in the low-frequency noise as the channel width is reduced. In comparison, the devices without STI butted channel region show a much lower reduction in the mobility and increase in the noise characteristics with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identied for the first time, as the cause of these anomalous phenomena.
Reduction of Reverse Short-Channel E ect in High-Energy Implanted Retrograde Well
HyeokjaeLee,YoungJunePark,HongShickMin,HyungsoonShin,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
In this research, the reverse short channel eect (RSCE) is signicantly dierent in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the VTH is signicantly smaller in the HRW than in diused well. We investigate the in uence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.
Investigation of Noise Characteristics of pn Diodes by Using a Device Simulator
HyunchulNah,Young-JunePark,HongShickMin,ChanhoLee,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.6
The noise characteristics of pn diodes obtained using a partial dierential equation (PDE) based device simulator with the transfer impedance method and the diffusion and the generationrecombination processes as the fundamental noise sources are investigated. From this approach, the noise behaviors over the entire operating region from the reverse to the very high forward bias regions for both long- and short-base diodes are obtained, and the results demonstrate good agreement with the previously reported data, except for the high forward bias region. A noise equivalent circuit model is introduced to explain the noise behaviors for that region and is proven to be useful for long-base diodes.
Design Consideration of Gate Shape in SOI MOSFETs for RF Applications
HyeokjaeLee,HyunchulNah,YoungJunePark,HongShickMin,이종호 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
The scale down of CMOS-SOI technologies has challenged toward the deep-submicron minimum feature size. This leads to great expectations for CMOS RF applications. Especially, the scale of the gate length along with the relatively wide gate width in RF-SOI circuits leads to reconsideration of gate design parameters, such as parasitic capacitance and AC/DC body potential instability. In this paper, we present the fT and the fmax properties associated with layout (nger width) and gate shapes (T-shape and H-shape structures) of multi-nger structures in sub-0.2-m partially depleted (PD) SOI devices. From analysis of unwanted parasitic eects, such as the gm variation (gm), and the extra parasitic capacitance variation (Cgs), and the body instability, we find the resulting speed characteristics (fT and fmax) to be strong functions of the number of ngers and the types of gate shapes.
Sung-JoonHong,HyunchulNah,YoungJunePark,HongShickMin,ChanhoLee,HyungsoonShin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
We show that the local thermal noise sources for the impedance eld method (IFM) can be calculated accurately using the Monte Carlo method (MC). Using the results from MC method, we investigate the accuracy of the conventional thermal noise sources used to calculate the noise with the IFM. The results for a 0.1 m N+-N-N+ device show that the conventional local thermal noise sources can be wrong for submicron devices. We also present the method of terminal noise calculation using an impedance eld which is suitable for the Monte Carlo method. This method is compared with the conventional method which uses the autocorrelation function in Monte Carlo method. The results show that the method using the impedance eld is very stable and fast numerically.
Low-Frequency Noise Characteristics for Mini-Field Dual-Body SOI Structure
HyeokjaeLee,이종호,YoungJunePark,HongShickMin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.1
The low-frequency noise characteristics of the devices formed for mixed mode circuit applications (mini-field dual-body structure) is investigated. A noise overshoot is not observed in MOSFETs in fully depleted silicon-on-insulator (SOI) devices but high resistance still exists in body-tied partially depleted SOI devices. We found that there is a correlation between the low-frequency noise overshoot and the body resistance. The low-frequency noise characteristics of the devices formed for mixed mode circuit applications (mini-field dual-body structure) is investigated. A noise overshoot is not observed in MOSFETs in fully depleted silicon-on-insulator (SOI) devices but high resistance still exists in body-tied partially depleted SOI devices. We found that there is a correlation between the low-frequency noise overshoot and the body resistance.
Analytical Model for and Scale-Down E ect of a Floating Body Voltage in SOI MOSFETs
Jeong-HyongYi,Young-JunePark,HongShickMin 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
Models for charge sharing and the body current of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs are proposed in order to extract the oating body voltage of devices under various operating conditions and for various device structure parameters. Also, an SOI simulator, incorporating the proposed models, is developed to predict the scaling properties of the oating body voltage, especially in the low voltage region.