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- 저자 : Hitoshi Tabata (검색결과 2 건)
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Control of the Ordered-Disordered State of B-site Ions in Ferroelectric Relaxor Superlattices
Hitoshi Tabata,가와이,Yasushi Hotta 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
Relaxor type ferroelectrics are treasure boxes both for basic physics and practical applications. Among them, Ba(Zr,Ti)O3 is one of the candidate materials for elucidating the mechanism of relaxor phenomena. It has homo-valent B-site ions of Zr4+ and Ti4+. Therefore, there is no driving force to push the ions into ordered structure. On the other hand, it has a possibility of co-existence of multi phases (so-called pinching eect). In case of the bulk state, we have found that the relaxor behavior is strongly aected by the annealing conditions. To make clear the intrinsic parameter for the relaxor, we have demonstrated the articial control the positioning of the B-site ions by the superlattice technique. The stacking periodicity and the compositional combination of BaTiO3 and BaZrO3 are changed systematically with this method and the sign of the relaxor is detected.
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Young-Geun Park,가와이,이혜연,Hidekazu Tanaka,Hitoshi Tabata 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
Switching of ferroelectric P-V hysteresis curve by light irradiation has been achieved in organic photoconductor (PC) copper phthalocyanine (CuPc)/inorganic ferroelectric (FE) BaTiO3 (BTO) heterojunction photomemory. The main mechanisms of this PC/FE photomemory device are the resistance decrease of photoconductor by light irradiation and the increase of ferroelectric remanent polarization by increasing applied bias. We have also investigated the eect of CuPc thickness on the photoinduced change of ferroelectric P-V hysteresis curve, and found that the intrinsic insulating dark resistance of organic photoconductor CuPc lm layer plays an important role for high eciency of PC/FE heterojunction photomemory. Light irradiation could switch the remanent polarization of ferroelectric BTO in this heterojunction up to 3 C/cm2, almost full remanent polarization of BTO single layer ferroelectric, whereas remanent polarization of that without light irradiation was almost zero. The eciency of this heterojunction photomemory reached up to 500 %.
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