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Hiroshi Kumagai,Koichi Toyoda,Mizunori Ezaki,Minoru Obara,Kyoichi Adachi 慶熙大學校 레이저 工學硏究所 1996 레이저공학 Vol.7 No.-
Epitaxial rare-earth (Re: Nd and Yb) and transition-metal (Tm:Cr) doped yttrium aluminum garnet (Re??:Y??Al??O??) films have been grown on various substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide microchip lasers. The films were characterized by Rutherford backscattering, x-ray diffraction, and photoluminescence measurements. TheseNd:YAG films on (100) silicon substrate having a large lattice mismatch show oriented stoichiometric growth. On the other hand, the films of Nd, Yb and Cr doped YAG on garnet substrates show the epitaxial growth with the smooth surfaces. Their characterization of rare-earth doped YAG thin films on various substrates was comparable to that of the rare-earth doped YAG bulk laser crystals.