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Structural and Magnetic Properties of Antiferromagnetic Heusler Ru2MnGe Epitaxial Thin Films
Naoto Fukatani,Hirohito Fujita,Tetsuya Miyawaki,Kenji Ueda,Hidefumi Asano 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.3
Structural and magnetic properties were investigated for Heusler-type alloy Ru2MnGe thin films. Ru2MnGe films on MgO substrate were subjected to an in-plane compressive strain, and exhibitedenhanced antiferromagnetic (AFM) transition temperature (TN) up to 353 K, which exceeds by 37K from the cubic bulk material (TN = 316 K). We also observed the exchange coupling betweenRu2MnGe and Heusler-type ferromagnetic (FM) half-metal Fe2CrSi thin films. The present AFMHeusler alloy with relatively high TN is useful to fabricate high-quality all Heusler-type half-metalAFM/FM junctions and is a promising material for the emerging field of AFM spintronics.