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Chowdhury, Md Delwar Hossain,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang Institute of Electrical and Electronics Engineers 2015 IEEE transactions on electron devices Vol. No.
<P>We studied the environmental stability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with single-layer (SiO<SUB>2</SUB>) and bilayer (SiO<SUB>2</SUB>/SiN<SUB>x</SUB>) passivation under high-humidity (80%) storage. During the 30 days of investigation, all single-layer passivated TFTs showed negative turn-ON voltage shifts (AVON), the size of which increased with storing time. The negative A VON is attributed to donor generation inside the active a-IGZO caused by the diffusion of ambient hydrogen/water molecules passing through the SiO<SUB>2</SUB> passivation layer. The X-ray photoelectron spectroscopy depth profile for the SiO<SUB>2</SUB> passivated structures confirms that the concentration of oxygen vacancies, which is initially larger at the a-IGZO/SiO<SUB>2</SUB> interface, compared with the bulk a-IGZO, decreases after 30 days of storage under high humidity. This can be explained as the passivation of oxygen vacancies by diffused hydrogen. On the other hand, all bilayer passivated TFTs showed good air stability at room temperature and high humidity (80%).</P>
Mativenga, Mallory,Su Hwa Ha,Di Geng,Dong Han Kang,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy J.,Jin Jang IEEE 2014 IEEE transactions on electron devices Vol.61 No.9
<P>We report a low-voltage-driven amorphous indium-gallium-zinc oxide (a-IGZO) semiconductor-based Corbino (circular) thin-film transistor (TFT) with infinite output resistance beyond pinchoff. The Corbino TFT has inner and outer concentric ring electrodes, and when the latter is the drain, channel width (W) decreases with channel length (L), such that the W/L ratio is not changed after pinchoff. As demonstrated herein, this a-IGZO Corbino TFT is, therefore, a good candidate for uniform current drivers in applications, such as active-matrix organic light-emitting diode display pixels, where it would maintain the same drive (diode) currents, even with variations in supply voltage (V<SUB>DD</SUB>).</P>
Billah, Mohammad Masum,Delwar Hossain Chowdhury, Md,Mativenga, Mallory,Jae Gwang Um,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy John,Jin Jang IEEE 2016 IEEE electron device letters Vol.37 No.6
<P>We report the numerical simulation of the effect of a dual gate (DG) TFT structure operating under dual gate driving on improving negative bias illumination stress (NBIS) of amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs). With respect to the transfer characteristics of a-IGZO TFTs, we show a larger negative threshold voltage shift (ΔVTH) with increasing a-IGZO active layer thickness. This trend is confirmed by TCAD simulation, where the initial transfer curve is plotted under varying a-IGZO thickness keeping a constant density of states. Under varying a-IGZO thickness, TCAD simulation results confirm TFTs under DG driving shows significantly less ΔVTH shift under NBIS compared with that of single gate (SG) driving TFTs. Under 10 K seconds of NBIS, TCAD simulation results show the increase in donor-like states (NGD) by 5.25 × 10<SUP>17</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP> and acceptor-like states (NGA) by 7.5 × 10<SUP>16</SUP> cm<SUP>-3</SUP> eV<SUP>-1</SUP>.</P>
Mativenga, Mallory,Sungjin An,Suhui Lee,Jaegwang Um,Di Geng,Mruthyunjaya, Ravi K.,Heiler, Gregory N.,Tredwell, Timothy J.,Jin Jang IEEE 2014 IEEE transactions on electron devices Vol.61 No.6
<P>Intrinsic mobility and intrinsic channel resistance (R<SUB>CH</SUB>) of amorphous, In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) with varying channel length (L) are investigated using a gated four-probe back-channel-etched TFT design. The intrinsic R<SUB>CH</SUB> is found to decrease from ~500 to ~250 kΩ per unit area by increasing V<SUB>GS</SUB> from 10 to 20 V. The intrinsic mobility is ~17 cm<SUP>2</SUP>/V·s, which is about 20% higher than that derived from the normal two-point probe measurements. Source and drain parasitic resistance (R<SUB>PAR</SUB>) of the a-IGZO TFTs is found to be of the same order of magnitude as the R<SUB>CH</SUB>-which is different from hydrogenated amorphous-silicon (a-Si:H) TFTs, where TFT operation is dominated by R<SUB>PAR</SUB>.</P>