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      저자 : Hanae Toura (검색결과 2 건)
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        Effect of complexing agent on the morphology and annealing temperature of CZTS kesterite thin films by electrochemical deposition

        Hanae Toura,Yousaf Hameed Khattak,Faisal Baig,Bernabe Mari Soucase,Mohamed Ebn Touhami,Bouchaib Hartiti 한국물리학회 2019 Current Applied Physics Vol.19 No.4

        Cu2ZnSnS4 kesterite thin films have been electrochemically deposited on indium doped tin oxide (ITO) coated glass substrates from an aqueous electrolyte solution containing CuSo4, ZnSo4, SnSo4 and Na2S2O3 precursors in one step deposition. The purpose of this work is to reduce the cost of fabrication of CZTS thin films with good crystallinity by investigated the effect of complexing agent Na2So4 with Na3C6H5O7 on annealing temperature of CZTS thin film. Based on the results it was found that good crystal structure was achieved at temperature 350 °C, that is below the reported annealing temperature in the literature. The electrodeposition process was maintained at room temperature with a working potential set at −1.05 V vs. Ag/AgCl. The annealed CZTS films were characterized by X-ray diffraction revealed the formation of a crystalline phase CZTS with major and intense peaks. Scanning electron microscopy (SEM) analysis stick to EDS show compact and uniform surface morphology with a spherical crystalline geometry and near stoichiometry metal atomic ratio for the different samples prepared. Atomic force microscopy (AFM) analysis confirms these results. From UV–visible spectroscopy, bandgap of around 1.5 eV was estimated for the kesterite thin films.

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        Effect of CZTSe BSF and minority carrier life time on the efficiency enhancement of CZTS kesterite solar cell

        Yousaf Hameed Khattak,Faisal Baig,Hanae Toura,Shafi Ullah,Bernabé Marí,Saira Beg,Hanif Ullah 한국물리학회 2018 Current Applied Physics Vol.18 No.6

        Cu2ZnSnS4 (CZTS) is non-toxic earth abundant material and a promising quaternary semiconductor compound of group I-II-IV-VI having kesterite symmetrical structure. Due to its optimum direct band gap, it has been considered suitable material for absorber layer for photovoltaic solar cell applications. This paper presents numerical modeling of experimentally designed CZTS solar cell by applying CZTSe as back surface field (BSF) layer. In this work we reproduced results for experimentally designed CZTS solar cell in SCAPS software. The simulated results are validated and compared with real experimental results. After optimization of cell parameters conversion efficiency of an optimized device is increased up to 6.42% (with CZTS thickness of 0.8 μm). With further optimization and applying CZTSe BSF layer conversion efficiency increased up to 12.92%. Under 1.5 AM illumination condition from the proposed cell promising results had been achieved with short circuit current (Jsc) 27.41 mA/cm2, open circuit voltage (Voc) 744.4mV, fill factor (FF) 63.35% and corresponding to a total area conversion efficiency of 12.92%.

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