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Halit Altuntas,Turkan Bayrak 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.2
In this work, we aimed to investigate the effects of two different plasma sourceson the electrical properties of low-temperature plasma-assisted atomic layerdeposited (PA-ALD) AlN thin films. To compare the electrical properties,50 nm thick AlN films were grown on p-type Si substrates at 200 °C by usingan inductively coupled RF-plasma (ICP) and a stainless steel hollowcathode plasma-assisted (HCPA) ALD systems. Al/AlN/p-Si metal-insulatorsemiconductor(MIS) capacitor devices were fabricated and capacitance versusvoltage (C-V) and current-voltage (I-V) measurements performed to assess thebasic important electrical parameters such as dielectric constant, effectivecharge density, flat-band voltage, breakdown field, and threshold voltage. Inaddition, structural properties of the films were presented and compared. Theresults show that although HCPA-ALD deposited AlN thin films hasstructurally better and has a lower effective charge density (Neff) value thanICP-ALD deposited AlN films, those films have large leakage current, lowdielectric constant, and low breakdown field. This situation was attributed tothe involvement of Si atoms into the AlN layers during the HCPA-ALDprocessing leads to additional current path at AlN/Si interface and might impairthe electrical properties. PACS: 73.30.+y: 73.40.Qv: 73.40.Ns