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- 저자 : Haitao Lyu (검색결과 2 건)
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Peng Xu,Lulu Lyu,Haitao Ge,Muhammad Umair Sami,Panpan Liu,Chunfeng Hu,Kai Xu 대한영상의학회 2019 Korean Journal of Radiology Vol.20 No.5
Objective: To assess segmental liver stiffness (LS) with MRI before and after endovascular intervention in patients with Budd-Chiari syndrome (BCS). Materials and Methods: Twenty-three patients (13 males and 10 females; mean age, 42.6 ± 12.6 years; age range, 31–56 years) with BCS as a primary liver disease were recruited for this study. Two consecutive magnetic resonance elastography (MRE) examinations were performed before the endovascular treatment. Fifteen patients who underwent endovascular intervention treatment also had follow-up MRE scans within three days after the procedure. LS was measured in three liver segments: the right posterior, right anterior, and left medial segments. Inter-reader and inter-exam repeatability were analyzed with intraclass correlation coefficients (ICCs) and Bland-Altman analysis. Segmental LS and clinical characteristics before and after the intervention were also compared. Results: Within three days of the endovascular intervention, all three segmental LS values decreased: LS of the right posterior segment = 7.23 ± 0.88 kPa (before) vs. 4.94 ± 0.84 kPa (after), LS of the right anterior segment = 7.30 ± 1.06 kPa (before) vs. 4.77 ± 0.85 kPa (after), and LS of the left medial segment = 7.22 ± 0.87 kPa (before) vs. 4.87 ± 0.72 kPa (after) (all p = 0.001). There was a significant correlation between LS changes and venous pressure gradient changes before and after treatments (r = 0.651, p = 0.009). The clinical manifestations of all 15 patients significantly improved after therapy. The MRE repeatability was excellent, with insignificant variations (inter-reader, ICC = 0.839–0.943: inter-examination, ICC = 0.765–0.869). Bland–Altman analysis confirmed excellent agreement (limits of agreement, 13.4–19.4%). Conclusion: Segmental LS measured by MRE is a promising repeatable quantitative biomarker for monitoring the treatment response to minimally invasive endovascular intervention in patients with BCS.
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A Novel High Performance SOI LDMOS with Buried Stepped Gate Field Plate
Hongchao Hu,Hongli Dai,Luoxin Wang,Haitao Lyu,Yuming Xue,Tu Qian 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.6
With the continuous development of science and technology, the power semiconductor devices are becoming more and more extensive. A novel silicon-on-insulator (SOI) lateral double-diffused metal–oxide–semiconductor (LDMOS) has been proposed in this paper. The new device is mainly characterized by introducing a stepped gate field plate in the low-K dielectric buried layer (SGFP-LK). On the one hand, the stepped gate field plate introduces extra lateral electric field peaks, which makes the distribution of potential lines more uniform and improves the breakdown voltage (BV). Moreover, the stepped gate fi eld plate decreases the specific on-resistance ( R on,sp ) by a promoted depletion. On the other hand, different from the traditional buried oxygen layer, the low-K dielectric layer strengthens the vertical electric field and signifi cantly increases BV. Ultimately, compared with the conventional device (C-SOI LDMOS), the BV of the SGFP-LK LDMOS is dramatically enhanced by 107% and the R on,sp is reduced by 24.8%. Furthermore, the figure of merit is enhanced by 472%. In addition, the maximum lattice temperature of the SGFP-LK LDMOS is dropped by 23.1 K, which relieves self-heating effects to some extent.
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