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RISS 인기검색어
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- 저자 : H. Kozeni (검색결과 1 건)
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T. Abe,N. Yamane,T. Nishiguchi,H. Kozeni,T. Yoshida,M. Adachi,H. Kasada,K. Ando 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
A practical blue waveguide Stark-eect optical modulator using ZnSe/ZnMgSSe asymmetric cou- pled quantum wells (ACQWs) has been demonstrated. The device structure is a p-i-n diode with a 50 periods ZnSe(6 ML)/ZnMgSSe(2 ML)/ZnSe(12 ML) ACQW active region grown on an n-GaAs substrate by using molecular beam epitaxy (MBE). The ridge-shape devices are fabricated by wet- etching with a fairly-short eective modulation waveguide length of 13 m and are located under a top stripe-electrode. The waveguide modulator exhibits a high modulation depth of 95 % (contrast ratio: 13 dB) under reverse bias condition of 68 V at room temperature at an operating wavelength of 458 nm. A practical blue waveguide Stark-eect optical modulator using ZnSe/ZnMgSSe asymmetric cou- pled quantum wells (ACQWs) has been demonstrated. The device structure is a p-i-n diode with a 50 periods ZnSe(6 ML)/ZnMgSSe(2 ML)/ZnSe(12 ML) ACQW active region grown on an n-GaAs substrate by using molecular beam epitaxy (MBE). The ridge-shape devices are fabricated by wet- etching with a fairly-short eective modulation waveguide length of 13 m and are located under a top stripe-electrode. The waveguide modulator exhibits a high modulation depth of 95 % (contrast ratio: 13 dB) under reverse bias condition of 68 V at room temperature at an operating wavelength of 458 nm.
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