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Barometric Pressure Sensor with Air Pocket Integrated with MOSFETs on the Same Substrate
Dongkyu Jang,Gyuweon Jung,Yujeong Jeong,Seongbin Hong,Jong-Ho Lee 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.3
In this paper, we propose a process to efficiently integrate barometric pressure sensors and MOSFETs on the same chip and show the measured results from these devices. The barometric sensor and MOSFETs are fabricated on the same Silicon substrate using CMOS process technology. The main process steps for the fabrication of the barometric sensor and MOSFETs are explained. Air pockets are connected around the barometric sensor and improve the sensitivity of the barometric sensor. The barometric sensor has a 0.5 μm thin diaphragm, which can reduce the size of the barometric sensor. The operating characteristics of the barometric sensor and the MOSFETs fabricated on the same substrate are verified.
( Yujeong Jeong ),( Seongbin Hong ),( Gyuweon Jung ),( Dongkyu Jang ),( Wonjun Shin ),( Jinwoo Park ),( Seung-ik Han ),( Hyungtak Seo ),( Jong-ho Lee ) 한국센서학회 2020 센서학회지 Vol.29 No.1
This study investigates the nitrogen dioxide (NO<sub>2</sub>) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO<sub>3</sub>) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO<sub>3</sub> sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)- type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 μm by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO<sub>2</sub> concentrations and operating temperatures. The response of the gas sensor increases as the NO<sub>2</sub> concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 μm. The sputtered WO<sub>3</sub> film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO<sub>2</sub> gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO<sub>3</sub> film increases.
Hong, Seongbin,Shin, Jongmin,Hong, Yoonki,Wu, Meile,Jang, Dongkyu,Jeong, Yujeong,Jung, Gyuweon,Bae, Jong-Ho,Jang, Ho Won,Lee, Jong-Ho The Royal Society of Chemistry 2018 Nanoscale Vol.10 No.37
<P>Oxygen (O2) sensors are needed for monitoring environment and human health. O2 sensing at low temperature is required, but studies are lacking. Here we report, for the first time, that the performance of a field effect transistor (FET)-type O2 sensor operating at 25 °C was improved greatly by a physisorption sensing mechanism. The sensing material was platinum-doped indium oxide (Pt-In2O3) nanoparticles formed by an inkjet printer. The FET-type sensor showed excellent repeatability under a physisorption mechanism and showed much better sensing performance than a resistor-type sensor fabricated on the same wafer at 25 °C. The sensitivity of the sensor increased with increasing Pt concentration up to ∼10% and decreased with further increasing Pt concentration. When the sensing temperature reached 140 °C, the sensing mechanism of the sensor changed from physisorption to chemisorption. Interestingly, the pulse pre-bias before the read bias affected chemisorption but had no effect on physisorption.</P>