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Al-doped zinc stannate films for photovoltaic applications
정현민,박영상,Sreedevi Gedi,Vasudeva Reddy Minnam Reddy,Gérald Ferblantier,김우경 한국화학공학회 2020 Korean Journal of Chemical Engineering Vol.37 No.4
Al-doped zinc stannate (Zn2SnO4 : Al or Zn-Sn-O: Al or AZTO) has attracted considerable attention as a next-generation transparent conducting oxide (TCO) owing to its properties. In this study, AZTO films were deposited by co-sputtering Al-doped zinc oxide (AZO) and SnO2 targets at room temperature. The as-deposited AZTO films were confirmed to be satisfactorily adherent with good uniformity. These films had an average transmittance of over 80%, energy band gap of >3.5 eV, and relatively low electrical resistivity of 1.29×101 cm. The composition ratio of Zn/Sn at 140 W of SnO2 power was approximately 2, indicating the formation of AZTO film with stoichiometric composition of Zn2SnO4 : Al at this power. Further, the Cu(InGa)Se2 (CIGS) device fabricated with AZTO (140W) as a TCO exhibited an efficiency of 0.73%, with a VOC of 0.51V, JSC of 3.76 mA/cm2, and FF of 38.4%. Furthermore, the conversion efficiency of CIGS cell was enhanced to 2.82% by employing the AZTO film deposited at the elevated temperature of 350 oC.
Nd-Doped SnO<sub>2</sub> and ZnO for Application in Cu(InGa)Se<sub>2</sub> Solar Cells
Park, Hyeonwook,Alhammadi, Salh,Bouras, Karima,Schmerber, Guy,Ferblantier, Gé,rald,Dinia, Aziz,Slaoui, Abdelilah,Jeon, Chan-Wook,Park, Chinho,Kim, Woo Kyoung American Scientific Publishers 2017 Science Of Advanced Materials Vol.9 No.12