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Euiyoun Hong,Daeyoun Yun,Hagyoul Bae,Hyunjun Choi,Won Hee Lee,Mihee Uhm,Hyojoon Seo,Jieun Lee,Jaeman Jang,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.7
<P>A distribution of interface states (<I>D</I><SUB>it</SUB>) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (<I>E</I><SUB>ph</SUB> <; <I>E</I><SUB>g</SUB>) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (<I>V</I><SUB>GS</SUB> <; <I>V</I><SUB>T</SUB>) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n- and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges <I>D</I><SUB>it</SUB> = 10<SUP>10</SUP> - 10<SUP>11</SUP> cm<SUP>-2</SUP>·eV<SUP>-1</SUP> with a typical U-shape.</P>
Hagyoul Bae,Inseok Hur,Ja Sun Shin,Daeyoun Yun,Euiyoun Hong,Keum-Dong Jung,Mun-Soo Park,Sunwoong Choi,Won Hee Lee,Mihee Uhm,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.4
<P>We report a hybrid technique for extraction of structure- and gate-bias-dependent parasitic source/drain (S/D) resistances (<I>RS</I> and <I>RD</I>) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). In the proposed technique, <I>C</I>- <I>V</I> and <I>I</I> -<I>V</I> measurements are combined for modeling and extraction. As structural dependence, the active-layer thickness <I>T</I><SUB>IGZO</SUB> , the gate length <I>L</I>, and the overlap length <I>L</I><SUB>ov</SUB> between the S/D and the gate are considered in the equivalent circuit for parasitic resistances. We also separated the horizontal component <I>RH</I> considering the transfer resistance <I>R</I><SUB>LT</SUB> depending on the transfer length <I>LT</I> and the channel resistance <I>R</I><SUB>CH</SUB>, as well as the vertical components in the S/D <I>R</I><SUB>VS</SUB> and <I>R</I><SUB>VD</SUB>. We confirmed the proposed technique through a separate extraction of <I>VGS</I> -independent contact resistances (<I>R</I><SUB>CS</SUB>, <I>R</I><SUB>CD</SUB>) from the channel length- and <I>VGS</I>-dependent <I>R</I><SUB>LT</SUB> and <I>R</I><SUB>CH</SUB>.</P>
A Novel Double HBT-Based Capacitorless 1T DRAM Cell With Si/SiGe Heterojunctions
Ja Sun Shin,Hagyoul Bae,Jaeman Jang,Daeyoun Yun,Jieun Lee,Euiyoun Hong,Dae Hwan Kim,Dong Myong Kim IEEE 2011 IEEE electron device letters Vol.32 No.7
<P>We propose a novel double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe heterojunction for a possible next-generation DRAM cell. It has a body with a narrow bandgap and a valence band offset between the source/drain and the body. Through an extended investigation via TCAD simulation, we verified the advantages of the proposed DHBT-based 1T DRAM cell, including an improved excess carrier generation rate, a high current gain, a large sensing margin, and a suppressed sensitivity to the bandgap-narrowing effect in the heavily doped source and drain.</P>
Ja Sun Shin,Hyunjun Choi,Hagyoul Bae,Jaeman Jang,Daeyoun Yun,Euiyoun Hong,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.2
<P>A vertical-gate Si/SiGe double heterojunction bipolar transistor (VerDHBT)-based capacitorless 1T DRAM cell is proposed for improved storage performance with a fabrication feasibility through a selective epitaxy. It is verified through a TCAD device simulation for dc and transient characteristics of the proposed VerDHBT-based 1T DRAM. The off-state leakage current was significantly reduced, while the on-current was considerably increased with <I>S</I><SUB>IF</SUB>/<I>B</I><SUB>mid</SUB>/<I>D</I><SUB>IF</SUB> = SiGe/SiGe/Si as the interfacial source/middle body/interfacial drain. A large hysteresis window for the “read 1” from the “read 0” and a long retention time at low latch voltage could be also obtained.</P>