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Yoo, Junsang,Lee, Euiyeon,Kim, Hee Young,Youn, Dong-ho,Jung, Junghyun,Kim, Hongwon,Chang, Yujung,Lee, Wonwoong,Shin, Jaein,Baek, Soonbong,Jang, Wonhee,Jun, Won,Kim, Soochan,Hong, Jongki,Park, Hi-Joon Nature Publishing Group, a division of Macmillan P 2017 Nature nanotechnology Vol.12 No.10
Electromagnetic fields (EMF) are physical energy fields generated by electrically charged objects, and specific ranges of EMF can influence numerous biological processes, which include the control of cell fate and plasticity. In this study, we show that electromagnetized gold nanoparticles (AuNPs) in the presence of specific EMF conditions facilitate an efficient direct lineage reprogramming to induced dopamine neurons in vitro and in vivo. Remarkably, electromagnetic stimulation leads to a specific activation of the histone acetyltransferase Brd2, which results in histone H3K27 acetylation and a robust activation of neuron-specific genes. In vivo dopaminergic neuron reprogramming by EMF stimulation of AuNPs efficiently and non-invasively alleviated symptoms in mouse Parkinson's disease models. This study provides a proof of principle for EMF-based in vivo lineage conversion as a potentially viable and safe therapeutic strategy for the treatment of neurodegenerative disorders.
Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs
Daeyoun Yun,Minkyung Bae,Jaeman Jang,Hagyoul Bae,Ja Sun Shin,Euiyeon Hong,Jieun Lee,Dae Hwan Kim,Dong Myong Kim IEEE 2011 IEEE electron device letters Vol.32 No.9
<P>A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor <I>dm</I>/<I>dV</I><SUB>GS</SUB> instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with <I>W</I>/<I>L</I> = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges <I>D</I><SUB>it</SUB> = 10<SUP>10</SUP>-10<SUP>11</SUP> cm<SUP>-2</SUP>eV<SUP>-1</SUP> with a U-shaped distribution over the band gap.</P>
Hagyoul Bae,Sungwoo Jun,Choon Hyeong Jo,Hyunjun Choi,Jaewook Lee,Yun Hyeok Kim,Seonwook Hwang,Hyun Kwang Jeong,Inseok Hur,Woojoon Kim,Daeyoun Yun,Euiyeon Hong,Hyojoon Seo,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.8
<P>We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measurement. In the proposed method, the subgap DOS [g<SUB>A</SUB>(E)] is extracted from the frequency-dispersive C-V characteristics by localized traps in the active channel region. The extracted g<SUB>A</SUB>(E) shows a superposition of the exponential tail states and the exponential deep states over the bandgap (N<SUB>TA</SUB> = 3 × 10<SUP>18</SUP> cm<SUP>-3</SUP> · eV<SUB>-1</SUB>, N<SUB>DA</SUB> = 2.8 × 10<SUP>17</SUP> cm<SUP>-3</SUP> · eV-1, kT<SUB>TA</SUB> = 0.04 eV, and kT<SUB>DA</SUB> = 0.77 eV). We note that the gate-bias-dependent Cfree by free electron charges can be separated from C<SUB>loc</SUB> by localized trap charges through the proposed method.</P>