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Emil V. Jelenković,Suet To 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.5
In this paper the effect of hydrogen implantation in silicon onnanoindentation-induced phase transformation is investigated. Hydrogenions were implanted in silicon through 300 nm thick oxide with doubleenergy implantation (75 and 40 keV). For both energies implantation dosewas 4 × 1016 cm−2. Some samples were thermally annealed at 400 °C. Themicro-Raman spectroscopy was applied on nanoindentation imprints andthe obtained results were related to the pop out/elbow appearances innanoindentatioin unloading-displacement curves. The Raman spectroscopyrevealed a suppression of Si-XII and Si-III phases and formation of a-Si inthe indents of hydrogen implanted Si. The high-resolution x-ray diffractionmeasurements were taken to support the analysis of silicon phase formationduring nanoindentation. Implantation induced strain, high hydrogenconcentration, and platelets generation were found to be the factors thatcontrol suppression of c-Si phases Si-XII and Si-III, as well as a-Si phaseenhancement during nanoindentation.