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        Suppression of Nanoindentation-Induced Phase Transformation in Crystalline Silicon Implanted with Hydrogen

        Emil V. Jelenković,Suet To 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.5

        In this paper the effect of hydrogen implantation in silicon onnanoindentation-induced phase transformation is investigated. Hydrogenions were implanted in silicon through 300 nm thick oxide with doubleenergy implantation (75 and 40 keV). For both energies implantation dosewas 4 × 1016 cm−2. Some samples were thermally annealed at 400 °C. Themicro-Raman spectroscopy was applied on nanoindentation imprints andthe obtained results were related to the pop out/elbow appearances innanoindentatioin unloading-displacement curves. The Raman spectroscopyrevealed a suppression of Si-XII and Si-III phases and formation of a-Si inthe indents of hydrogen implanted Si. The high-resolution x-ray diffractionmeasurements were taken to support the analysis of silicon phase formationduring nanoindentation. Implantation induced strain, high hydrogenconcentration, and platelets generation were found to be the factors thatcontrol suppression of c-Si phases Si-XII and Si-III, as well as a-Si phaseenhancement during nanoindentation.

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