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Yağmur Güler,Barış Onaylı,Mehmet Taha Haliloğlu,Doğan Yılmaz,Tarık Asar,Ekmel Özbay 한국전기전자재료학회 2024 Transactions on Electrical and Electronic Material Vol.25 No.2
In this paper, we present the results of a comparative analysis of two alternative SiN x passivation techniques of AlGaN/GaN high electron mobility transistor (HEMT) manufactured using identical epitaxial structure and fabrication processes. AlGaN/GaN HEMT has demonstrated excellent device characteristics, making them excellent candidates for high power, high frequency, and low noise applications. However, the full potential of GaN HEMT s in large signal operation at high frequency is limited by trapping effects and leakage currents at the interface between the epitaxial structure and passivation layer. A SiN x passivation layer has commonly been used to prevent electron trapping at the surface by providing extra positive charges to neutralize trapped negative electrons on the surface. This comparative study investigates the effects of a 75 nm SiN x passivation layer fabricated using both plasma-enhanced chemical vapor deposition ( PECVD ) and inductively coupled plasma chemical vapor deposition ( ICPCVD ) techniques on the DC and RF performance of the transistor.
SiC Substrate Effects on Electron Transport in the Epitaxial Graphene Layer
Engin Arslan,Semih Çakmakyapan,Özgür Kazar,Serkan Bütün,Sefer Bora Li esivdin,Neval A. Cinel,Gülay Ertas,Sükrü Ardal,Engin T ras,Jawad-ul-Hassan,E. Janzén,Ekmel Özbay 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
Hall effect measurements on epitaxial graphene (EG) on SiC substrate have been carried out as a function of temperature. The mobility and concentration of electrons within the two-dimensional electron gas (2DEG) at the EG layers and within the underlying SiC substrate are readily separated and characterized by the simple parallel conduction extraction method (SPCEM). Two electron carriers are identified in the EG/SiC sample: one highmobility carrier (3493 cm2/Vs at 300 K) and one low-mobility carrier (1115 cm2/Vs at 300 K). The high mobility carrier can be assigned to the graphene layers. The second carrier has been assigned to the SiC substrate.