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- 저자 : Duan Xiangfeng (검색결과 2 건)
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Toward Tunable Band Gap and Tunable Dirac Point in Bilayer Graphene with Molecular Doping
Yu, Woo Jong,Liao, Lei,Chae, Sang Hoon,Lee, Young Hee,Duan, Xiangfeng American Chemical Society 2011 Nano letters Vol.11 No.11
<P>The bilayer graphene has attracted considerable attention for potential applications in future electronics and optoelectronics because of the feasibility to tune its band gap with a vertical displacement field to break the inversion symmetry. Surface chemical doping in bilayer graphene can induce an additional offset voltage to fundamentally affect the vertical displacement field and the band gap opening in bilayer graphene. In this study, we investigate the effect of chemical molecular doping on band gap opening in bilayer graphene devices with single or dual gate modulation. Chemical doping with benzyl viologen molecules modulates the displacement field to allow the opening of a transport band gap and the increase of the on/off ratio in the bilayer graphene transistors. Additionally, Fermi energy level in the opened gap can be rationally controlled by the amount of molecular doping to obtain bilayer graphene transistors with tunable Dirac points, which can be readily configured into functional devices, such as complementary inverters.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2011/nalefd.2011.11.issue-11/nl2025739/production/images/medium/nl-2011-025739_0005.gif'></P>
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Chae, Sang Hoon,Yu, Woo Jong,Bae, Jung Jun,Duong, Dinh Loc,Perello, David,Jeong, Hye Yun,Ta, Quang Huy,Ly, Thuc Hue,Vu, Quoc An,Yun, Minhee,Duan, Xiangfeng,Lee, Young Hee Nature Publishing Group 2013 Nature materials Vol.12 No.5
Despite recent progress in producing transparent and bendable thin-film transistors using graphene and carbon nanotubes, the development of stretchable devices remains limited either by fragile inorganic oxides or polymer dielectrics with high leakage current. Here we report the fabrication of highly stretchable and transparent field-effect transistors combining graphene/single-walled carbon nanotube (SWCNT) electrodes and a SWCNT-network channel with a geometrically wrinkled inorganic dielectric layer. The wrinkled Al<SUB>2</SUB>O<SUB>3</SUB> layer contained effective built-in air gaps with a small gate leakage current of 10<SUP>−13</SUP> A. The resulting devices exhibited an excellent on/off ratio of ~10<SUP>5</SUP>, a high mobility of ~40 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> and a low operating voltage of less than 1 V. Importantly, because of the wrinkled dielectric layer, the transistors retained performance under strains as high as 20% without appreciable leakage current increases or physical degradation. No significant performance loss was observed after stretching and releasing the devices for over 1,000 times. The sustainability and performance advances demonstrated here are promising for the adoption of stretchable electronics in a wide variety of future applications.
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