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Growth and Characterization of Pulse Electrodeposited CuInSe2 Thin Films
Dixit Prasher,Poolla Rajaram 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.5
CuInSe2 thin films were grown on SnO2-coated glass substrates using the pulse electrodeposition (PED) technique. The CuInSe2 films were grown at different potentials using pulses of different frequencies ranging from 1 KHz to 1 MHz. The electrodeposited films were annealed in vacuum at 300°C, for 1 hr, to improve the crystallinity. The annealed films were characterized by x-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Analysis of x-rays (EDAX), and UV-VIS-NIR spectra. The results show that the electrodeposited CuInSe2 films have good stoichiometry and are single phase with an optical gap around 1 eV. SEM studies show that the films grown using pulses of frequency 1 KHz contain nanoparticles of size 50-60 nm, whereas those grown using pulses of frequency 100 KHz and 1 MHz contain micronsized particles.
Akash Shukla,Vipin K. Kaushik,Dixit Prasher 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.1
The growth and characterization of MgxZn1-xO thin films by aerosol-assisted chemical vapor deposition (AACVD) technique is reported in this paper. We have grown the thin films of ZnO by adding varying concentrations of magnesium (Mg) on a glass substrate. The precursor from which the MgxZn1-xO thin films were grown was made up of a mixture of zinc acethylacetonate and magnesium acetate tetrahydrate in boiled isopropyl alcohol. Oxygen gas was used as a carrier gas and substrate temperature was maintained at 400°C. MgxZn1-xO thin films were finally characterized by x-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS-NIR spectroscopy. XRD results show that MgxZn1-xO thin films displayed a wurtzite structure and addition of Mg leads to a slight shift towards higher 2-theta values. AFM results show that MgZnO thin films were uniformly covered with nano flakes and their size decreases with an increase in Mg content. Optical studies show that with the increase of Mg content, transparency as well energy band gap of the MgxZn1-xO thin films increases, which also agrees with the reported values.