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M. Taghi Rahnemai,A. Dittmann,Mostafa Ghadami 한국문화관광학회 2009 문화관광연구 Vol.11 No.1
This study investigates the carrying capacity of Kelardasht as a destination based on the host attitude and perception. in the first, it investigated the socio-cultural, economic and environmental impacts of tourism in the destination as perceived by the host community and then the attitude of host towards tourism development evaluated as a key factor for determining the carry capacity of the area. The results show that there is a direct relationships between the attitudes of Host Community (as a key factor in determining the carrying capacity of a destination) and one`s individual benefits of Tourism, one`s attitude to the future of destination influenced by Tourism, one`s attitude to More favorite type of tourism with respect to it`s function And its impacts on environment, one`s attitude to dependence of destination to Tourism and one`s awareness to the environmental problem.
Carrying Capacity of Destination with respect to the Host Attitude and Perception
M. Taghi Rahnemai,A. Dittmann,Mostafa Ghadami 세계문화관광학회 2007 Conference Proceedings Vol.8 No.0
This study investigates the carrying capacity of Kelardasht as a destination based on the host attitude and perception. in the first, it investigated the sociocultural, economic and environmental impacts of tourism in the destination as perceived by the host community and then the attitude of host towards tourism development evaluated as a key factor for determining the carry capacity of the area.
Kate Poropatich,Dave Dittmann,Yi-Hua Chen,Kirtee Raparia,Kristy Wolniak,Juehua Gao 대한병리학회 2017 Journal of Pathology and Translational Medicine Vol.51 No.3
Background: Intravascular large B-cell lymphoma (IVLBCL) is a rare type of extranodal lymphoma with growth mainly in the lumina of vessels. We studied a small series of IVLBCL and focused on its central nervous system (CNS) involvement. Methods: Searching the medical records of Northwestern Memorial Hospital, we identified five cases of IVLBCL from January 2007 to January 2015. Clinical information, hematoxylin and eosin stained histologic slides and immunohistochemistry studies were reviewed for all cases. Polymerase chain reaction (PCR) analysis for the immunoglobulin (Ig) heavy and light chain gene rearrangement was performed on all five cases. Results: Three of the five cases of IVLBCL were autopsies. Patients’ age ranged from 56 to 84. CNS involvement was present in two cases—in both patients, the CNS involvement showed an extravascular pattern with confluent sheet-like formation. PCR analysis confirmed that in one case the systemic intravascular and CNS extravascular components were clonally identical. Conclusions: In a small case series of IVLBCL, we observed that CNS involvement by IVLBCL often has an extravascular morphology, but is clonally identical to the intravascular counterpart by PCR analysis. As IVLBCL can have a rapidly progressing poor outcome, it should be kept in the differential diagnoses for patients presenting with lymphoma of the CNS. The presence of extravascular growth patterns in the CNS should not exclude IVLBCL as a diagnosis.
Wang, Yue,Kang, Kyung-Mun,Kim, Minjae,Lee, Hong-Sub,Waser, Rainer,Wouters, Dirk,Dittmann, Regina,Yang, J. Joshua,Park, Hyung-Ho Elsevier 2019 Materials today Vol.28 No.-
<P><B>Abstract</B></P> <P>Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed. Mott insulators and some related doped systems can undergo an insulator-to-metal transition or metal-to-insulator transition under various excitation methods, such as pressure, temperature, and voltage. A summary of these driving forces that induce Mott-transition is presented together with their specific transition mechanisms for different materials. This is followed by a dynamics study of oxygen vacancy migration in voltage-driven non-volatile Mott-transition and the related resistive switching performance. We distinguish between a filling-controlled Mott-transition, which corresponds to the conventional valence change memory effect in band-insulators, and a bandwidth-controlled Mott-transition, which is due to a change in the bandwidth in the Mott system. Last, different types of Mott-RRAM-based neural network concepts are also discussed. The results in this review provide guidelines for the understanding, and further study and design of Mott-transition-based RRAM materials and their correlated devices.</P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>