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Organic thin-film diodes with internal charge separation zone
Masaya Terai,Daisuke Kumaki,Takeshi Yasuda,Katsuhiko Fujita,Tetsuo Tsutsui 한국물리학회 2005 Current Applied Physics Vol.5 No.4
We demonstrate the fabrication of new organic thin-lm diodes with an internal bipolar charge separation (ICS) zone. Wefabricated an organic double-layer diode with the structure of indium-tin oxide (ITO)/tris(8-quinolinolato)aluminum(III) (Alq3)/N,N0-bis(3-methylphenyl)-1,10-biphenyl-4,40-diamine (TPD)/Al. The stacking order of Alq3 and TPD of this diode is reversedcompared with conventional organic double-layer LEDs. In the ITO/Alq3/TPD/Al device, only a small current ows in both caseswhen the ITO electrode is biased positive or negative, because the device has large charge injection barriers and transport resistance.When the combined zone composed of Mg-doped Alq3 and vanadium oxide layers was inserted between the Alq3/TPD interface,large current ow was observed at the positive bias on ITO electrode. The diode behaved quite similar with the conventional organicLED, ITO/TPD/Alq3/Al. The large increase of forward current can never be ascribed to the decrease of injection barriers nor chargetransport resistance, because no change of device conguration was added except for the addition of the zone at the Alq3/TPDinterface. This large forward current ow was ascribed to the internal bipolar charge separation within the added zone..
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