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Green Synthesis of Ce Doped Cs 3 MnBr 5 for Highly Stable Violet Light Emitting Diodes
Subhajit Dutta,Jung Hyeon Yoo,Seok Bin Kwon,Swagata Panchanan,Ho Chan Yoo,Dae Ho Yoon 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.6
Over the past few decades, wide-bandgap semiconductor materials have been extensively explored for short-wavelength light-emitting diode (LED) owing to their rich technological applications spanning from phototherapy, sensors, and healthcare, to the indoor plantation. However, to date, few papers have reported violet-emitting (< 435 nm) perovskite materials and LEDs. Despite the tunable bandgap property, perovskite researchers are still lagging to achieve effi cient violet emitting material. The presence of toxic lead, environment stability, complex synthesis, and achieving a large bandgap emitter have put a constraint on the development of violet perovskite LEDs. To address the abovementioned issues, herein we report a simple water-assisted synthesis of lead-free wide-bandgap perovskite with bright violet emission. No use of other solvent during synthesis makes our process very simple, cost-eff ective, and eco-friendly. As synthesized Ce doped Cs 3 MnBr 5 shows a visible blind absorption with an eff ective optical bandgap of 3.12 eV. Introduction of Ce in Cs 3 MnBr 5 lattice demonstrate dual violet emission peaks at 387 and 419 nm. Our synthesized Cs 3 MnBr 5 :Ce also shows a good environment stability with narrow full-width half maxima (FWHM). We achieve the violet light with standard chromaticity coordinates of (0.18044, 0.02034) which makes Cs 3 MnBr 5 :Ce a promising candidate for stable violet perovskite LEDs.
A Brief Study on the Fabrication of III-V/Si Based Tandem Solar Cells
Swagata Panchanan,DUTTA SUBHAJIT,Kumar Mallem,Simpy Sanyal,박진주,주민규,조영현,조은철,이준신 한국태양광발전학회 2018 Current Photovoltaic Research Vol.6 No.4
Silicon (Si) solar cells are the most successful technology which are ruling the present photovoltaic (PV) market. In that essence, multijunction (MJ) solar cells provided a new path to improve the state-of-art efficiencies. There are so many hurdles to grow the MJ III-V materials on Si substrate as Si with other materials often demands similar qualities, so it is needed to realize the prospective of Si tandem solar cells. However, Si tandem solar cells with MJ III-V materials have shown the maximum efficiency of 30 %. This work reviews the development of the III-V/Si solar cells with the synopsis of various growth mechanisms i.e hetero-epitaxy, wafer bonding and mechanical stacking of III-V materials on Si substrate. Theoretical approaches to design efficient tandem cell with an analysis of state-of-art silicon solar cells, sensitivity, difficulties and their probable solutions are discussed in this work. An analytical model which yields the practical efficiency values to design the high efficiency III-V/Si solar cells is described briefly.
Hole Selective Contacts: A Brief Overview
Simpy Sanyal,DUTTA SUBHAJIT,Minkyu Ju,Kumar Mallem,Swagata Panchanan,조은철,조영현,이준신 한국태양광발전학회 2019 Current Photovoltaic Research Vol.7 No.1
Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as MoOx, WOx, V2O5 and TiO2 replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as MoOx, WOx and V2O5has been investigated. Recently MoOx, WOx & V2O5 hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below 200°C. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.