http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
The Role of (111)MgO Underlayer in Growth of c-axis Oriented Barium Ferrite Films
D. W. Erickson,Y. K. Hong,S. H. Gee,T. Tanaka,M. H. Park,I. T. Nam 한국자기학회 2004 Journal of Magnetics Vol.9 No.4
Hexagonal barium-ferrite (BaFe₁₂O_(19), magnetoplumbite structure; BaM) film with perpendicularly c-axis orientation was successfully deposited on (100) silicon substrates with an MgO (111) underlayer by rf diode sputtering and in-situ heating at 920 ℃. The magnetic and structural properties of 0.27 ㎛ thick BaM films on MgO (111) underlayers were compared to films of the same thickness deposited onto single-crystal MgO (111) and c-plane (000ι) sapphire (Al₂O₃) substrates by vibrating sample magnetometry (VSM), x-ray diffractometer (XRD), and atomic force microscopy (AFM). The thickness dependence of MgO (111) underlayers on silicon wafer was found to have a large effect on both magnetic and structural properties of the BaM film. The thickness of 15 ㎚ MgO (111) underlayers produced BaM films with almost identical magnetic and structural properties as the single-crystal substrates; this can be explained by the lower surface roughness for thinner underlayer thicknesses. The magnetization saturation (Ms) and the ratio H_(c∥)/H_(c⊥) for the BaM film with a 15 ㎚ MgO (111) underlayer is 217 emu/cc and 0.24, respectively. This is similar to the results for the BaM films deposited on the single-crystal MgO (111) and sapphire substrates of 197 emu/cc and 0.10, 200 emu/cc and 0.12, respectively. Therefore, the proposed MgO (111) underlayer can be used in many applications to promote c-axis orientation without the cost of expensive substrates.