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K. Miki,Y. Oshita,D. Katada,K. Nobe,M. Nomura,T. Abe,H. Kasada,K. Ando,M. Adachi 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
High sensitivity, stable ultraviolet photodiodes of a ZnSSe PIN junction structure on p+-GaAs substrates were developed by using molecular beam epitaxy (MBE). These short-wavelength photodiodes are fabricated on p-type (100) GaAs by utilizing an optimized \hetero-interface super-lattice (SL) buer" consisting of ZnTe-ZnSe multiple quantum well (MQW), overcoming a large energy barrier (>1 eV) for hole conduction in the GaAs-ZnSe hetero-interface. Another new important improved technique is to form an extremely thin, high-donor doping n+-window layer of 150 Å for incident ultraviolet light, by which we have established a high sensitivity of 0.11 A/W (ηex = 45 %: wavelength = 300 nm) with very low dark leakage currents (sub pA/mm2 at 20 V) at 300 K.