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Zhe Cao,Qiyu Huang,Chuanrui Zhao,Qing Zhang 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.6
Metal-assisted chemical etching (MACE) has been used as a promising alternativemethod to fabricate micro/nano-structures on silicon substrates inexpensively. In thispaper, profiles of deep trenches on silicon substrates, with different doping levels,fabricated by MACE were studied. A layer of interconnected gold islands was firstdeposited onto the silicon substrate as catalyst. Electrochemical etching was thenperformed in a hydrofluoric acid (HF) and hydrogen peroxide (H2O2) mixturesolution with different HF-to-H2O2 ratio ρ (ρ = [HF]/([HF] + [H2O2])). Vertical deeptrenches were fabricated successfully by using this method. It was observed thateven under identical experimental condition, sidewalls with various tilting anglesand different morphology could still form on silicon substrates with differentresistivity. This possibly because with different resistivity silicon substrate, thegradient of holes in it greatly changed, and so did the final morphology. As a result,the tilting angle of etched trench sidewall can be tuned from 6 ° to 96 ° using siliconsubstrates with different resistivity and etchants with different ρ. By applying theangle-tuning technique revealed in this study, high aspect ratio patterns with verticalsidewalls could be fabricated and three-dimensional complex structures could bedesigned and realized in the future.